Presentation 2013-06-21
High Responsivity and Wide Bandwidth Operation of InP-Based pin-Photodiodes Monolithically Integrated with 90° Hybrid for 100 Gb/s Compact Coherent Receiver
Hideki YAGI, Naoko INOUE, Yutaka ONISHI, Ryuji MASUYAMA, Tomokazu KATSUYAMA, Takehiko KIKUCHI, Yoshihiro TATEIWA, Yoshihiro YONEDA, Masaru TAKECHI, Hajime SHOJI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) The digital coherent transmission technology has been considered to be a promising candidate for the accomplishment of a 100 Gb/s channel rate in wavelength division multiplexing (WDM) systems. InP-based photodiodes monolithically integrated with a 90° hybrid for a coherent receiver can afford small packaging size and eliminate complicated alignments in the assembly process, resulting in low cost and stabilization of characteristics. We demonstrated a high responsivity and wide 3-dB bandwidth of InP-based pin-photodiodes monolithically integrated with the 90° hybrid consisting of multimode interference structures (MMI) by the butt joint process and present the compact coherent receiver with these integrated devices.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Coherent transmission / 90°hybrid / Multimode interference structure / pin-Photodiode / Butt-joint process
Paper # OPE2013-11,LQE2013-21
Date of Issue

Conference Information
Committee LQE
Conference Date 2013/6/14(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Responsivity and Wide Bandwidth Operation of InP-Based pin-Photodiodes Monolithically Integrated with 90° Hybrid for 100 Gb/s Compact Coherent Receiver
Sub Title (in English)
Keyword(1) Coherent transmission
Keyword(2) 90°hybrid
Keyword(3) Multimode interference structure
Keyword(4) pin-Photodiode
Keyword(5) Butt-joint process
1st Author's Name Hideki YAGI
1st Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.()
2nd Author's Name Naoko INOUE
2nd Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
3rd Author's Name Yutaka ONISHI
3rd Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
4th Author's Name Ryuji MASUYAMA
4th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
5th Author's Name Tomokazu KATSUYAMA
5th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
6th Author's Name Takehiko KIKUCHI
6th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
7th Author's Name Yoshihiro TATEIWA
7th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
8th Author's Name Yoshihiro YONEDA
8th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
9th Author's Name Masaru TAKECHI
9th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
10th Author's Name Hajime SHOJI
10th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
Date 2013-06-21
Paper # OPE2013-11,LQE2013-21
Volume (vol) vol.113
Number (no) 100
Page pp.pp.-
#Pages 4
Date of Issue