Presentation 2013-06-21
GHz Response of Metamorphic InAlAs MSM Photodetector on GaAs Substrate
Kazuaki MAEKITA, Takeo MARUYAMA, Koichi IIYAMA, Toshikazu SUZUKI,
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Abstract(in English) We fabricated metal-semiconductor-metal (MSM) photodetectors on metamorphic InAlAs layer grown on GaAs substrate. The devices were measured at the wavelength of 0.8 μm region. Receiving area is 30 μm x 30 μm and electrode spacing is 2 μm, 1 μm, and 0.4 μm. With the electrode spacing of 1 μm, the dark current of 0.5 nA was obtained at the bias voltage of -5 V. At the wavelength of 830 nm, the responsivity of 0.11 A/W was obtained at the bias voltage of -5 V. At the wavelength of 850 nm, maximum bandwidth of 8 GHz was obtained at the bias voltage of -20 V
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Keyword(in English) Metamorphic / InAlAs / MSM photodetector / III-V compound / High frequency response
Paper # OPE2013-10,LQE2013-20
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Committee LQE
Conference Date 2013/6/14(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) GHz Response of Metamorphic InAlAs MSM Photodetector on GaAs Substrate
Sub Title (in English)
Keyword(1) Metamorphic
Keyword(2) InAlAs
Keyword(3) MSM photodetector
Keyword(4) III-V compound
Keyword(5) High frequency response
1st Author's Name Kazuaki MAEKITA
1st Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University()
2nd Author's Name Takeo MARUYAMA
2nd Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
3rd Author's Name Koichi IIYAMA
3rd Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
4th Author's Name Toshikazu SUZUKI
4th Author's Affiliation Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology
Date 2013-06-21
Paper # OPE2013-10,LQE2013-20
Volume (vol) vol.113
Number (no) 100
Page pp.pp.-
#Pages 4
Date of Issue