Presentation 2013-06-21
MOVPE growth realized on heterogeneous substrate employing directly-bonded InP template
Keiichi MATSUMOTO, Xinxin ZHANG, Yoshinori KANAYA, Kazuhiko SHIMOMURA,
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Abstract(in English) Integrating III-V materials which enables high-speed computer with large-capacity on Si has been required. Therefore, we have fabricated InP/Si substrate employing wafer direct bonding and wet-etching. Then growth of GaInAs/InP MQW structure has been realized on the substrate using MOVPE. The same work has also been demonstrated on SiO_2-Si and Glass substrate. Furthermore, selective MOVPE growth of GaInAs/InP MQW structure has been done on the InP/Si substrate. Our work is of importance in terms of integration of several functional optical devices on heterogeneous substrate.
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Keyword(in English) Optical interconnect / Wafer Direct Bonding / InP template / MOVPE
Paper # OPE2013-9,LQE2013-19
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Committee LQE
Conference Date 2013/6/14(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) MOVPE growth realized on heterogeneous substrate employing directly-bonded InP template
Sub Title (in English)
Keyword(1) Optical interconnect
Keyword(2) Wafer Direct Bonding
Keyword(3) InP template
Keyword(4) MOVPE
1st Author's Name Keiichi MATSUMOTO
1st Author's Affiliation Dept. of Electrical and Electronics Engineering, Faculty of Science and Technology, Sophia University()
2nd Author's Name Xinxin ZHANG
2nd Author's Affiliation Dept. of Electrical and Electronics Engineering, Faculty of Science and Technology, Sophia University
3rd Author's Name Yoshinori KANAYA
3rd Author's Affiliation Dept. of Electrical and Electronics Engineering, Faculty of Science and Technology, Sophia University
4th Author's Name Kazuhiko SHIMOMURA
4th Author's Affiliation Dept. of Electrical and Electronics Engineering, Faculty of Science and Technology, Sophia University
Date 2013-06-21
Paper # OPE2013-9,LQE2013-19
Volume (vol) vol.113
Number (no) 100
Page pp.pp.-
#Pages 6
Date of Issue