Presentation 2013-06-21
Flexibility of the Organic Transistor Calculated by the Finite Element Analysis
Masatoshi SAKAI, Yota YAMAZAKI, Syohei YAMAGUCHI, Jyunro HAYASHI, Kazuhiro KUDO,
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Abstract(in English) Recent years, sub-millimeter bending durability of the organic thin film devices have been achieved by placing the active layer of the transistor in the neutral strain surface. At around the neutral strain surface, an organic thin film have a high bending durability because in-plane tensile and compressive strain are canceled each other. However, this type of highly flexible device is also destroyed or cause irreversible degradation by a hard bending. Therefore, we have carried out the finite element analysis on the flexible device. The results predicts that the most possible breaking point for this type of a flexible transistor is the boarder of organic layer and Au electrode.
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Keyword(in English) organic semiconductor / field effect transistor / flexible electronics / finite element method
Paper # EMD2013-10,CPM2013-25,OME2013-33
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Committee EMD
Conference Date 2013/6/14(1days)
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Registration To Electromechanical Devices (EMD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Flexibility of the Organic Transistor Calculated by the Finite Element Analysis
Sub Title (in English)
Keyword(1) organic semiconductor
Keyword(2) field effect transistor
Keyword(3) flexible electronics
Keyword(4) finite element method
1st Author's Name Masatoshi SAKAI
1st Author's Affiliation Chiba University()
2nd Author's Name Yota YAMAZAKI
2nd Author's Affiliation Chiba University
3rd Author's Name Syohei YAMAGUCHI
3rd Author's Affiliation Chiba University
4th Author's Name Jyunro HAYASHI
4th Author's Affiliation Chiba University
5th Author's Name Kazuhiro KUDO
5th Author's Affiliation Chiba University
Date 2013-06-21
Paper # EMD2013-10,CPM2013-25,OME2013-33
Volume (vol) vol.113
Number (no) 96
Page pp.pp.-
#Pages 2
Date of Issue