Presentation 2013-06-21
A method of transistor degradation estimation using ring oscillators
Tatsunori IKEDA, Yukiya MIURA,
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Abstract(in English) Aging called Negative Bias Temperature Instability (NBTI), Negative Bias Temperature Instability (NBTI) and Chanel Hot Carrier (CHC) occurs in nanoscale transistors, which is a major factor for degrading the performance of LSIs. Operating speed of transistors is decreased by aging, and LSI malfunctions by a delay in signal propagation. In this paper, we present a method for estimating the amount of increase in delay time and a threshold value per one transistor from change in the period of two ring oscillators by aging. It was verified by circuit simulation that the proposed method can estimate with an error rate of less than 5% of the delay time increase and an error of less than 2% of the threshold voltage increase.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) NBTI / PBTI / CHC / ring oscillators / signal delay
Paper # DC2013-15
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Committee DC
Conference Date 2013/6/14(1days)
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Registration To Dependable Computing (DC)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A method of transistor degradation estimation using ring oscillators
Sub Title (in English)
Keyword(1) NBTI
Keyword(2) PBTI
Keyword(3) CHC
Keyword(4) ring oscillators
Keyword(5) signal delay
1st Author's Name Tatsunori IKEDA
1st Author's Affiliation Graduate School of System Design, Tokyo Metropolitan University()
2nd Author's Name Yukiya MIURA
2nd Author's Affiliation Faculty of System Design, Tokyo Metropolitan University:Japan Science and Technology Agency, CREST
Date 2013-06-21
Paper # DC2013-15
Volume (vol) vol.113
Number (no) 104
Page pp.pp.-
#Pages 6
Date of Issue