| Presentation | 2013-06-21 A Theretical Discussion for Testabilty of a Degraded LSI in Field Yasuo SATO, Seiji KAJIHARA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Various electronic systems that consist of variety of LSIs require very high reliability in field. However, physical degradation phenomena such as BTI (Bias Temperature Instability) make it difficult to keep the reliability in field only by conventional fabrication LSI testing. Therefore, many reports or researches in regard to monitoring technologies or field testing have begun to be published. Although intensive researches have done in physical modeling of degradation, it does not seem that so many researches are being done in the degradation activities themselves or the required functionalities of field testing that are based on the modeling. This paper addresses various parameters that affect field reliability of LSIs by a simulation, which is based-on a typical physical model. As it is difficult to define many parameter values correctly and is also hard to get actual reliability data in field, it is impossible to adjust the simulated FIT number to the actual number. However, the authors show that a qualitative discussion clarify the impact of each parameter. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Field / Degradation / BTI / Test / Fabrication variation / FIT / LSI / Semiconductor devices |
| Paper # | DC2013-12 |
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| Conference Information | |
| Committee | DC |
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| Conference Date | 2013/6/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Dependable Computing (DC) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Theretical Discussion for Testabilty of a Degraded LSI in Field |
| Sub Title (in English) | |
| Keyword(1) | Field |
| Keyword(2) | Degradation |
| Keyword(3) | BTI |
| Keyword(4) | Test |
| Keyword(5) | Fabrication variation |
| Keyword(6) | FIT |
| Keyword(7) | LSI |
| Keyword(8) | Semiconductor devices |
| 1st Author's Name | Yasuo SATO |
| 1st Author's Affiliation | Kyushu Institute of Technology:Japan Science and Technology Agency, CREST() |
| 2nd Author's Name | Seiji KAJIHARA |
| 2nd Author's Affiliation | Kyushu Institute of Technology:Japan Science and Technology Agency, CREST |
| Date | 2013-06-21 |
| Paper # | DC2013-12 |
| Volume (vol) | vol.113 |
| Number (no) | 104 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |