Presentation 2013-07-22
Optimization Considering Dependence of Signal Propagation Time of SFQ Logic Gates on Bias Voltage
Mikio OTSUBO, Yuki YAMANASHI, Nobuyuki YOSHIKAWA,
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Abstract(in English) Superconductive single flux quantum (SFQ) digital circuits can operate at a clock frequency of several tens of gigahertz with low power consumption. However, the operating margin of these circuits decreases with an increase in the operating frequency because a timing error occurs in the low bias region. In this study, increasing a critical current of Josephson junction and adding bias feeding line in the SFQ circuit control the dependence of the signal propagation time on bias voltage, that decreases a timing error and enables a wide operating margin at a high operating frequency. In this paper, we simulate the optimization of the logic circuits by controlling dependence of signal propagation time on bias voltage. The logic gates have been optimized taking the dependence of the propagation time on the bias voltage into account. Designed logic cells have larger controllability of their delay times without deterioration of the bias margins compared to the conventional logic cells.
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Keyword(in English) Single flux quantum circuits / Logic gates / Timing error
Paper # SCE2013-10
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Committee SCE
Conference Date 2013/7/15(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Optimization Considering Dependence of Signal Propagation Time of SFQ Logic Gates on Bias Voltage
Sub Title (in English)
Keyword(1) Single flux quantum circuits
Keyword(2) Logic gates
Keyword(3) Timing error
1st Author's Name Mikio OTSUBO
1st Author's Affiliation Yokohama National University()
2nd Author's Name Yuki YAMANASHI
2nd Author's Affiliation Faculty of Engineering, Yokohama National University
3rd Author's Name Nobuyuki YOSHIKAWA
3rd Author's Affiliation Faculty of Engineering, Yokohama National University
Date 2013-07-22
Paper # SCE2013-10
Volume (vol) vol.113
Number (no) 149
Page pp.pp.-
#Pages 4
Date of Issue