Presentation	2013-07-18 Simulation Technologies for Realizing Terahertz Electron Devices Eiichi SANO,
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Abstract(in English)	Graphene, a two-dimensional honeycomb structure of carbon atoms, has attracted a lot of attention due to its unique nature as a platform of physics and high electron mobility and velocity for potential applications such as electron devices, interconnections, electrodes, and conductive transparent films. In addition to the research and development of fabrication technologies, it is important to elucidate the electron structure, transport and relaxation process and investigate high-performance device structures with computer simulations for realizing graphene devices. This presentation reports the simulation technologies in the research and development of terahertz graphene devices.
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Keyword(in English)	Graphene / Tight-binding Hamiltonian / Monte Carlo simulation / FDTD EM simulation
Paper #	MW2013-59,OPE2013-28,EST2013-23,MWP2013-18
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Conference Information
Committee	EST
Conference Date	2013/7/11(1days)
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Paper Information
Registration To	Electronic Simulation Technology (EST)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Simulation Technologies for Realizing Terahertz Electron Devices
Sub Title (in English)
Keyword(1)	Graphene
Keyword(2)	Tight-binding Hamiltonian
Keyword(3)	Monte Carlo simulation
Keyword(4)	FDTD EM simulation
1st Author's Name	Eiichi SANO
1st Author's Affiliation	Research Center for Integrated Quantum Electronics, Hokkaido University()
Date	2013-07-18
Paper #	MW2013-59,OPE2013-28,EST2013-23,MWP2013-18
Volume (vol)	vol.113
Number (no)	143
Page	pp.pp.-
#Pages	6
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