Presentation 2013-05-17
High speed response of a Si avalanche photodiode fabricated by 0.18μm standard CMOS process
Toshiyuki SHIMOTORI, Ryoichi GYOBU, Takeo MARUYAMA, Koich IIYAMA,
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Abstract(in English) Si avalanche photodiodes (APDs) with different electrode spacing are fabricated by 0.18μm standard CMOS process, and their frequency response are measured at 0.8μm wavelength region. The structure of the device is based on the n-MOSFET on a p-substrate, and a p-well layer is used as an optical absorption layer, and the structure to cancel the photogenerated carriers generated in the p-substrate are introduced for fast response. For the APD with the electrode spacing of 1μm, the maximum bandwidth of 7 GHz and the gain bandwidth product of 270 GHz are achieved. The capacitance of the APD is measured to be 443 fF, and the corresponding CR-limited bandwidth with 500Ω load is estimated to be 7.2 GHz, showing the response speed is limited by the CR-limited bandwidth. Since the PAD capacitance is included in the measured capacitance, the capacitance can be decreased and the bandwidth may be increased resultantly with decreasing the PAD size.
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Keyword(in English) Si / Avalanche photodiode / standard CMOS process / High speed response
Paper # LQE2013-16
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Conference Information
Committee LQE
Conference Date 2013/5/10(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High speed response of a Si avalanche photodiode fabricated by 0.18μm standard CMOS process
Sub Title (in English)
Keyword(1) Si
Keyword(2) Avalanche photodiode
Keyword(3) standard CMOS process
Keyword(4) High speed response
1st Author's Name Toshiyuki SHIMOTORI
1st Author's Affiliation Kanazawa University Graduate School of Natural Science & Technology()
2nd Author's Name Ryoichi GYOBU
2nd Author's Affiliation Kanazawa University Graduate School of Natural Science & Technology
3rd Author's Name Takeo MARUYAMA
3rd Author's Affiliation Kanazawa University Graduate School of Natural Science & Technology
4th Author's Name Koich IIYAMA
4th Author's Affiliation Kanazawa University Graduate School of Natural Science & Technology
Date 2013-05-17
Paper # LQE2013-16
Volume (vol) vol.113
Number (no) 49
Page pp.pp.-
#Pages 4
Date of Issue