Presentation | 2013-05-17 GHz Response of MSM InGaAs Photodetector on Si Substrate by BCB Bonding Kazuaki MAEKITA, Takeo MARUYAMA, Koichi IIYAMA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | To realize an optical interconnect, it is necessary to integrate light sources and photodetectors on the silicon platform. We fabricated an InGaAs metal-semiconductor-metal (MSM) photodetector bonded on Si substrate by Benzocyclobutene (BCB) bonding method. Fabricated InGaAs MSM photodetector was characterized at the wavelength of 1.55μm. At the bias voltage of -6 V, the dark current of 29 nA was obtained. At the bias voltage of 15 V, the responsivity and bandwidth was 0.035 A/W and 3GHz, respectively. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | BCB bonding / InGaAs / MSM photodetector / Silicon photonics / High frequency response |
Paper # | LQE2013-15 |
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Committee | LQE |
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Conference Date | 2013/5/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | GHz Response of MSM InGaAs Photodetector on Si Substrate by BCB Bonding |
Sub Title (in English) | |
Keyword(1) | BCB bonding |
Keyword(2) | InGaAs |
Keyword(3) | MSM photodetector |
Keyword(4) | Silicon photonics |
Keyword(5) | High frequency response |
1st Author's Name | Kazuaki MAEKITA |
1st Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University() |
2nd Author's Name | Takeo MARUYAMA |
2nd Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
3rd Author's Name | Koichi IIYAMA |
3rd Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
Date | 2013-05-17 |
Paper # | LQE2013-15 |
Volume (vol) | vol.113 |
Number (no) | 49 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |