Presentation 2013-05-17
GHz Response of MSM InGaAs Photodetector on Si Substrate by BCB Bonding
Kazuaki MAEKITA, Takeo MARUYAMA, Koichi IIYAMA,
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Abstract(in English) To realize an optical interconnect, it is necessary to integrate light sources and photodetectors on the silicon platform. We fabricated an InGaAs metal-semiconductor-metal (MSM) photodetector bonded on Si substrate by Benzocyclobutene (BCB) bonding method. Fabricated InGaAs MSM photodetector was characterized at the wavelength of 1.55μm. At the bias voltage of -6 V, the dark current of 29 nA was obtained. At the bias voltage of 15 V, the responsivity and bandwidth was 0.035 A/W and 3GHz, respectively.
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Keyword(in English) BCB bonding / InGaAs / MSM photodetector / Silicon photonics / High frequency response
Paper # LQE2013-15
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Committee LQE
Conference Date 2013/5/10(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) GHz Response of MSM InGaAs Photodetector on Si Substrate by BCB Bonding
Sub Title (in English)
Keyword(1) BCB bonding
Keyword(2) InGaAs
Keyword(3) MSM photodetector
Keyword(4) Silicon photonics
Keyword(5) High frequency response
1st Author's Name Kazuaki MAEKITA
1st Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University()
2nd Author's Name Takeo MARUYAMA
2nd Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
3rd Author's Name Koichi IIYAMA
3rd Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
Date 2013-05-17
Paper # LQE2013-15
Volume (vol) vol.113
Number (no) 49
Page pp.pp.-
#Pages 4
Date of Issue