Presentation 2013-05-17
Consideration of the S/N ratio in the Semiconductor Optical Amplifier
Kazuki HIGUCHI, Nobuhito TAKEUCHI, Minoru YAMADA,
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Abstract(in English) Characteristics of the amplification and intensity noise in the semiconductor optical amplifier (SOA) for the intensity modulated light are theoretically analyzed and compared with those of measurement results. We have found that the modulated component is less amplified than the continuous wave (CW) component in the SOA. Then the relative intensity noise (RIN), which is defined as ratio of the square value of the intensity fluctuation to that of the CW power can be improved by the amplification. However, the signal to the noise ratio (S/N ratio) defined for ratio of the square value of the modulated signal power to that of the intensity fluctuation becomes worse.
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Keyword(in English) Semiconductor optical amplifiers / SOA / Noise / Semiconductor lasers
Paper # LQE2013-3
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Committee LQE
Conference Date 2013/5/10(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Consideration of the S/N ratio in the Semiconductor Optical Amplifier
Sub Title (in English)
Keyword(1) Semiconductor optical amplifiers
Keyword(2) SOA
Keyword(3) Noise
Keyword(4) Semiconductor lasers
1st Author's Name Kazuki HIGUCHI
1st Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University()
2nd Author's Name Nobuhito TAKEUCHI
2nd Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
3rd Author's Name Minoru YAMADA
3rd Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
Date 2013-05-17
Paper # LQE2013-3
Volume (vol) vol.113
Number (no) 49
Page pp.pp.-
#Pages 6
Date of Issue