| Presentation | 2013-04-25 Formation of laterally-graded Ge based hetero-structure Ryo MATSUMURA, Taizoh SADOH, Masanobu MIYAO, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Laterally-graded SiGe-on-insulator is the key-structure for next-generation Si-technology, which enables advanced device-arrays with various energy-band-gaps as well as 2-dimensional integration of functional-materials with various lattice-constants. Segregation kinetics in rapid-melting growth of SiGe stripes are investigated in wide ranges of stripe-lengths (10-500μm) and cooling-rates (10-19℃/s). Universal laterally-graded SiGe-profiles obeying Scheil-equation are obtained for all samples with low cooling-rate (10℃/s), which enables robust designing of lateral-SiGe-profiles. For samples with high cooling-rates and long stripe-lengths, anomalous two-step-falling profiles are obtained. Dynamical analysis considering the growth-rate-effects enables comprehensive understanding of such phenomena. This provides the unique tool to achieve modulated lateral-SiGe-profiles beyond Scheil-equation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiGe on insulator / rapid-melting growth / Si segregation / laterally graded profile / Scheil equation |
| Paper # | SDM2013-5,OME2013-5 |
| Date of Issue |
| Conference Information | |
| Committee | OME |
|---|---|
| Conference Date | 2013/4/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of laterally-graded Ge based hetero-structure |
| Sub Title (in English) | |
| Keyword(1) | SiGe on insulator |
| Keyword(2) | rapid-melting growth |
| Keyword(3) | Si segregation |
| Keyword(4) | laterally graded profile |
| Keyword(5) | Scheil equation |
| 1st Author's Name | Ryo MATSUMURA |
| 1st Author's Affiliation | Department of Electronics, Kyushu University() |
| 2nd Author's Name | Taizoh SADOH |
| 2nd Author's Affiliation | Department of Electronics, Kyushu University |
| 3rd Author's Name | Masanobu MIYAO |
| 3rd Author's Affiliation | Department of Electronics, Kyushu University |
| Date | 2013-04-25 |
| Paper # | SDM2013-5,OME2013-5 |
| Volume (vol) | vol.113 |
| Number (no) | 18 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |