Presentation 2013-04-12
Design of V_(3 V), V_(20V) Generator System for 3D-ReRAM and NAND Flash Memory Hybrid Solid-State Drives
Teruyoshi HATANAKA, Koh JOHGUCHI, Shogo HACHIYA, Ken TAKEUCHI,
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Abstract(in English) This paper proposes a single-inductor, dual-output, parallel-boosting boost converter for 3D-integrated ReRAM and NAND flash memory hybrid solid-state drives. This circuit is composed of single inductor and outputs 3V for ReRAM program (V_), 20V for NAND program (V_). The technical issues in the previous works are the increasing the number of inductors and dead time during boosting. In this work, there is no additional power and performance degradation compared with the conventional double-inductor boost converter. The inductor area is reduced by 15%. The interference between the boost converters is suppressed by the inductance design and simultaneous boosting of two programming-voltages is experimentally demonstrated.
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Keyword(in English) SSD / ReRAM / NAND flash memory / boost converter / 3D-integration
Paper # ICD2013-16
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Committee ICD
Conference Date 2013/4/4(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Design of V_(3 V), V_(20V) Generator System for 3D-ReRAM and NAND Flash Memory Hybrid Solid-State Drives
Sub Title (in English)
Keyword(1) SSD
Keyword(2) ReRAM
Keyword(3) NAND flash memory
Keyword(4) boost converter
Keyword(5) 3D-integration
1st Author's Name Teruyoshi HATANAKA
1st Author's Affiliation Chuo University:University of Tokyo()
2nd Author's Name Koh JOHGUCHI
2nd Author's Affiliation Chuo University
3rd Author's Name Shogo HACHIYA
3rd Author's Affiliation Chuo University
4th Author's Name Ken TAKEUCHI
4th Author's Affiliation Chuo University
Date 2013-04-12
Paper # ICD2013-16
Volume (vol) vol.113
Number (no) 1
Page pp.pp.-
#Pages 6
Date of Issue