| Presentation | 2013-04-18 Study of High Quality GaN Template by Nano-channel FIELO Using UV Nanoimprint Jun Mizuno, Akiko Okada, Shuichi Shoji, Atsushi A. Yamaguchi, Hiroki Goto, Haruo Sunakawa, Toshiharu Matsueda, Hidetoshi Shinohara, Hiromi Nishihar, Hiroshi Goto, Akira Usui, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Nano-channel FIELO (facet-initiated lateral overgrowth) using UV nanoimprint has been proposed. The etch pit density measurements reveal that the dislocation density of the GaN template was estimated to 5×10^7/cm^2. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | UV nanoimprint / Nano-channel FIELO / GaN template / LED |
| Paper # | ED2013-8 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2013/4/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study of High Quality GaN Template by Nano-channel FIELO Using UV Nanoimprint |
| Sub Title (in English) | |
| Keyword(1) | UV nanoimprint |
| Keyword(2) | Nano-channel FIELO |
| Keyword(3) | GaN template |
| Keyword(4) | LED |
| 1st Author's Name | Jun Mizuno |
| 1st Author's Affiliation | Institute for Nanoscience and Nanotechnology, Waseda University() |
| 2nd Author's Name | Akiko Okada |
| 2nd Author's Affiliation | Department of Nanoscience and Nanoengineering, Waseda University |
| 3rd Author's Name | Shuichi Shoji |
| 3rd Author's Affiliation | Department of Nanoscience and Nanoengineering, Waseda University |
| 4th Author's Name | Atsushi A. Yamaguchi |
| 4th Author's Affiliation | Optoelectronic Device System R&D Center, Kanazawa Institute of Technology |
| 5th Author's Name | Hiroki Goto |
| 5th Author's Affiliation | Nitride Semiconductor Department, Furukawa Co. Ltd. |
| 6th Author's Name | Haruo Sunakawa |
| 6th Author's Affiliation | Nitride Semiconductor Department, Furukawa Co. Ltd. |
| 7th Author's Name | Toshiharu Matsueda |
| 7th Author's Affiliation | Nitride Semiconductor Department, Furukawa Co. Ltd. |
| 8th Author's Name | Hidetoshi Shinohara |
| 8th Author's Affiliation | Nano Processing-System Division, Toshiba Machine Co. Ltd. |
| 9th Author's Name | Hiromi Nishihar |
| 9th Author's Affiliation | Nano Processing-System Division, Toshiba Machine Co. Ltd. |
| 10th Author's Name | Hiroshi Goto |
| 10th Author's Affiliation | Nano Processing-System Division, Toshiba Machine Co. Ltd. |
| 11th Author's Name | Akira Usui |
| 11th Author's Affiliation | Nitride Semiconductor Department, Furukawa Co. Ltd. |
| Date | 2013-04-18 |
| Paper # | ED2013-8 |
| Volume (vol) | vol.113 |
| Number (no) | 9 |
| Page | pp.pp.- |
| #Pages | 3 |
| Date of Issue | |