| Presentation | 2013-05-17 Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping Mukannan ARIVANANDHAN, Raira GOTOH, Kozo FUJIWARA, Yasuhiro HAYAKAWA, Satoshi UDA, Makoto KONAGAI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Boron (B)-doped Si solar cell strongly degrades during practical operation which results low minority carrier lifetime (MCL) thereby low efficiency. The effect of Ge codoping on the MCL, light induced degradation (LID) and the formation mechanism of void defects are investigated in B doped CZ-Si[1]. From the lifetime measurement, it was observed that the MCL increases evidently when the Ge concentration increases in the crystal. Moreover, LID experiment shows that the B-doped CZ-Si wafers showed a rapid initial degradation of lifetime under illumination and almost saturated after prolonged illumination. In the case of B and Ge codoped wafers, the initial lifetime degradation was relatively low with high degraded lifetime especially for the heavily Ge(>1x10^<18>cm^<-3>) codoped CZ-Si. Moreover, the flow pattern defect (FPD) density was drastically decreased as the Ge concentration increased in the crystal. The mechanism for the MCL enhancement, LID and FPD suppression was explained based on Ge-vacancy defect formation during post-growth cooling of the ingots. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Czochralski-Silicon / Ge codoping / Minority carrier lifetime / Grown-in micro defects |
| Paper # | ED2013-35,CPM2013-20,SDM2013-42 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2013/5/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping |
| Sub Title (in English) | |
| Keyword(1) | Czochralski-Silicon |
| Keyword(2) | Ge codoping |
| Keyword(3) | Minority carrier lifetime |
| Keyword(4) | Grown-in micro defects |
| 1st Author's Name | Mukannan ARIVANANDHAN |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Raira GOTOH |
| 2nd Author's Affiliation | Institute for Materials Research, Tohoku University |
| 3rd Author's Name | Kozo FUJIWARA |
| 3rd Author's Affiliation | Institute for Materials Research, Tohoku University |
| 4th Author's Name | Yasuhiro HAYAKAWA |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Satoshi UDA |
| 5th Author's Affiliation | Institute for Materials Research, Tohoku University |
| 6th Author's Name | Makoto KONAGAI |
| 6th Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology |
| Date | 2013-05-17 |
| Paper # | ED2013-35,CPM2013-20,SDM2013-42 |
| Volume (vol) | vol.113 |
| Number (no) | 40 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |