講演名 2013-05-17
Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
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抄録(和)
抄録(英) Boron (B)-doped Si solar cell strongly degrades during practical operation which results low minority carrier lifetime (MCL) thereby low efficiency. The effect of Ge codoping on the MCL, light induced degradation (LID) and the formation mechanism of void defects are investigated in B doped CZ-Si[1]. From the lifetime measurement, it was observed that the MCL increases evidently when the Ge concentration increases in the crystal. Moreover, LID experiment shows that the B-doped CZ-Si wafers showed a rapid initial degradation of lifetime under illumination and almost saturated after prolonged illumination. In the case of B and Ge codoped wafers, the initial lifetime degradation was relatively low with high degraded lifetime especially for the heavily Ge(>1x10^<18>cm^<-3>) codoped CZ-Si. Moreover, the flow pattern defect (FPD) density was drastically decreased as the Ge concentration increased in the crystal. The mechanism for the MCL enhancement, LID and FPD suppression was explained based on Ge-vacancy defect formation during post-growth cooling of the ingots.
キーワード(和)
キーワード(英) Czochralski-Silicon / Ge codoping / Minority carrier lifetime / Grown-in micro defects
資料番号 ED2013-35,CPM2013-20,SDM2013-42
発行日

研究会情報
研究会 CPM
開催期間 2013/5/9(から1日開催)
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開催地(英)
テーマ(和)
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委員長氏名(和)
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副委員長氏名(和)
副委員長氏名(英)
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幹事補佐氏名(和)
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講演論文情報詳細
申込み研究会 Component Parts and Materials (CPM)
本文の言語 ENG
タイトル(和)
サブタイトル(和)
タイトル(英) Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
サブタイトル(和)
キーワード(1)(和/英) / Czochralski-Silicon
第 1 著者 氏名(和/英) / Mukannan ARIVANANDHAN
第 1 著者 所属(和/英)
Research Institute of Electronics, Shizuoka University
発表年月日 2013-05-17
資料番号 ED2013-35,CPM2013-20,SDM2013-42
巻番号(vol) vol.113
号番号(no) 40
ページ範囲 pp.-
ページ数 5
発行日