| Presentation | 2013-05-17 Electron-tunneling operation of single-dopant-atom transistors at elevated temperature : Toward room temperature operation Daniel MORARU, Earfan HAMID, Arup SAMANTA, Le The ANH, Takeshi MIZUNO, Hiroshi MIZUTA, Michiharu TABE, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Single-dopant transistors work based on single-electron tunneling via an individual dopant atom located in a nanoscale channel. Until recently, single-dopant transistors have been studied only at low temperatures (<15 K) in order to clarify the fundamental properties of dopants in nano-channels. At higher temperatures, tunneling via dopants may be smeared out because of thermally-activated carriers. However, it is important to design single-electron tunneling single-dopant devices that work even at elevated temperatures. In this work, we show that the tunnel barrier can be increased by special design of the channel shape to enhance the dielectric confinement effect. This allows the observation of tunneling current peaks even at temperatures of about 100 K, much higher than reported so far. Ab initio simulations offer further insights into the basic properties of individual dopants in extremely downscaled channels. The results suggest the possibility of realizing single-dopant transistors operating by tunneling even at room temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Dielectric confinement effect / single dopant / field-effect transistor / high temperature / single-electron tunneling |
| Paper # | ED2013-28,CPM2013-13,SDM2013-35 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2013/5/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electron-tunneling operation of single-dopant-atom transistors at elevated temperature : Toward room temperature operation |
| Sub Title (in English) | |
| Keyword(1) | Dielectric confinement effect |
| Keyword(2) | single dopant |
| Keyword(3) | field-effect transistor |
| Keyword(4) | high temperature |
| Keyword(5) | single-electron tunneling |
| 1st Author's Name | Daniel MORARU |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Earfan HAMID |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | Arup SAMANTA |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | Le The ANH |
| 4th Author's Affiliation | School of Materials Science, Japan Advanced Institute of Science and Technology |
| 5th Author's Name | Takeshi MIZUNO |
| 5th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 6th Author's Name | Hiroshi MIZUTA |
| 6th Author's Affiliation | School of Materials Science, Japan Advanced Institute of Science and Technology:Nano Group, ECS, Faculty of Physical and Applied Sciences, University of Southampton |
| 7th Author's Name | Michiharu TABE |
| 7th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 2013-05-17 |
| Paper # | ED2013-28,CPM2013-13,SDM2013-35 |
| Volume (vol) | vol.113 |
| Number (no) | 40 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |