| Presentation | 2013-05-16 Focused ion beam Ga implantation into P-doped SOI layer and its Seebeck coefficient Yuhei SUZUKI, Kazutoshi MIWA, Faiz SALLEH, Masaru SHIMOMURA, Akihiro ISHIDA, Hiroya IKEDA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | With the aim of fabricating a thermopile infrared detector using Si nanowires, we have investigated the formation of a p-type silicon-on-insulator (SOI) layer by focused ion beam (FIB) Ga implantation into a P-doped SOI layer. In this study, the Ga-implanted SOI layers with an average Ga concentration of 3×10^<18>cm^<-3> and 3×10^<19>cm^<-3> were prepared and their Seebeck coefficients were measured. It was found that the sign of thermoelectromotive force of the Ga-implanted SOI layer was reversed from the original P-doped SOI layer. Therfore, the p-type SOI layer was formed by the Ga implantation. The measured Seebeck coefficient was found not to be reproduced by the theoretically calculated value of co-doped Si. This disagreement is thought to be due to the influence of Ga ion distribution in the implanted SOI layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | thermopile IR photodetector / Si nanowire / Seebeck coefficient / focused ion beam / ion implantation |
| Paper # | ED2013-22,CPM2013-7,SDM2013-29 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2013/5/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Focused ion beam Ga implantation into P-doped SOI layer and its Seebeck coefficient |
| Sub Title (in English) | |
| Keyword(1) | thermopile IR photodetector |
| Keyword(2) | Si nanowire |
| Keyword(3) | Seebeck coefficient |
| Keyword(4) | focused ion beam |
| Keyword(5) | ion implantation |
| 1st Author's Name | Yuhei SUZUKI |
| 1st Author's Affiliation | Research Institure of Electronics, Shizuoka University() |
| 2nd Author's Name | Kazutoshi MIWA |
| 2nd Author's Affiliation | Research Institure of Electronics, Shizuoka University |
| 3rd Author's Name | Faiz SALLEH |
| 3rd Author's Affiliation | Research Institure of Electronics, Shizuoka University:Japan Society for the Promotion of Science |
| 4th Author's Name | Masaru SHIMOMURA |
| 4th Author's Affiliation | Research Institure of Electronics, Shizuoka University |
| 5th Author's Name | Akihiro ISHIDA |
| 5th Author's Affiliation | Faculty of Engineering, Shizuoka University |
| 6th Author's Name | Hiroya IKEDA |
| 6th Author's Affiliation | Research Institure of Electronics, Shizuoka University |
| Date | 2013-05-16 |
| Paper # | ED2013-22,CPM2013-7,SDM2013-29 |
| Volume (vol) | vol.113 |
| Number (no) | 40 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |