| Presentation | 2013-05-16 The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method Muthusamy OMPRAKASH, Mukannan ARIVANANDHAN, Raman ARUNKUMAR, Hisashi MORII, Toru AOKI, Tadanobu KOYAMA, Yoshimi MOMOSE, Hiroya IKEDA, Hirokazu Tatsuoka, Yasunori OKANO, Tetsuo OZAWA, Yuko INATOMI, Sridharan MOORTHYBABU, Yasuhiro HAYAKAWA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Si dissolution into Ge melt and crystal growth of SiGe was in-situ observed by X-ray penetration method. The rectangular shaped sandwich sample of Si (seed)/Ge/Si(feed) was used for the experiment. The penetrated X-ray intensities through the sample were recorded by rectangular shaped CdTe detector as a function of time and temperature. The experimental results demonstrate that the dissolution of Si seed was larger compared to Si feed crystal. Dissolution lengths result agreed well with numerical results. From the experimental and numerical dissolution length results. The dissolution process of Si into Ge melt was strongly influenced by gravity induced solutal convection. Moreover, the crystal growth of SiGe was clearly observed from the drastic variation of penetrated X-ray intensity near the growth interface. The growth mechanism for the observed SiGe growth process was discussed based on the penetrated X-ray intensity profile and composition profile measured by EPMA. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Heat and mass transfer / Growth from solutions / Silicon-Germanium alloy / In-situ observation |
| Paper # | ED2013-21,CPM2013-6,SDM2013-28 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2013/5/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method |
| Sub Title (in English) | |
| Keyword(1) | Heat and mass transfer |
| Keyword(2) | Growth from solutions |
| Keyword(3) | Silicon-Germanium alloy |
| Keyword(4) | In-situ observation |
| 1st Author's Name | Muthusamy OMPRAKASH |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University:Graduate School of Science and Technology, Shizuoka University() |
| 2nd Author's Name | Mukannan ARIVANANDHAN |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | Raman ARUNKUMAR |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | Hisashi MORII |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Toru AOKI |
| 5th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 6th Author's Name | Tadanobu KOYAMA |
| 6th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 7th Author's Name | Yoshimi MOMOSE |
| 7th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 8th Author's Name | Hiroya IKEDA |
| 8th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 9th Author's Name | Hirokazu Tatsuoka |
| 9th Author's Affiliation | Faculty of Engineering, Shizuoka University |
| 10th Author's Name | Yasunori OKANO |
| 10th Author's Affiliation | Osaka University |
| 11th Author's Name | Tetsuo OZAWA |
| 11th Author's Affiliation | Shizuoka Institute of Science and Technology |
| 12th Author's Name | Yuko INATOMI |
| 12th Author's Affiliation | Japan Aerospace Exploration Agency |
| 13th Author's Name | Sridharan MOORTHYBABU |
| 13th Author's Affiliation | Crystal Growth Centre, Anna University |
| 14th Author's Name | Yasuhiro HAYAKAWA |
| 14th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 2013-05-16 |
| Paper # | ED2013-21,CPM2013-6,SDM2013-28 |
| Volume (vol) | vol.113 |
| Number (no) | 40 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |