| Presentation | 2013-05-16 Formation of GaAsN alloys by surface nitridation Noriyuki URAKAMI, Akihiro WAKAHARA, Hiroto SEKIGUCHI, Hiroshi OKADA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaAsN alloys was grown by surface nitridation and applied for the growth of quantum well (QW). Increase of incorporation of N atoms into GaAsN with decrease of As_2 pressure suggests that N atoms incorporations governed by competing the group-V sites with As atoms. Photoluminescence (PL) peak energy was not dependent on the nitridation time of from 5～15 sec and the energy was approximately 1.37 eV. On the other hands, PL peak energy was 1.31 eV for the nitridation time of 20 sec. The PL intensity was decreased by two orders than those of the nitridetion time of 5～15 sec. The reflection high energy electron diffraction (RHEED) pattern showed As-stabilized (2×4) and N-stabilized (3×3) reconstructions for the samples nitrided by 15sec and 20sec, respectively. Stable Ga-N bonds remain after the interruption time for the surface condition of 15 sec nitridation. Formation of N-clustering consisted a number of N-N pairs lead to the decrease of PL intensity due to the increase of nonradiative center for the surface condition of 20 sec nitridation., In the GaAsN/GaP QW, PL peak energy shifted to low-energy side and the intensity increased with increasing the amount of N supply. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAsN / Dilute nitride / III-V-N / Surface nitridation |
| Paper # | ED2013-20,CPM2013-5,SDM2013-27 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2013/5/9(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of GaAsN alloys by surface nitridation |
| Sub Title (in English) | |
| Keyword(1) | GaAsN |
| Keyword(2) | Dilute nitride |
| Keyword(3) | III-V-N |
| Keyword(4) | Surface nitridation |
| 1st Author's Name | Noriyuki URAKAMI |
| 1st Author's Affiliation | Toyohashi University of Technology() |
| 2nd Author's Name | Akihiro WAKAHARA |
| 2nd Author's Affiliation | Toyohashi University of Technology |
| 3rd Author's Name | Hiroto SEKIGUCHI |
| 3rd Author's Affiliation | Toyohashi University of Technology |
| 4th Author's Name | Hiroshi OKADA |
| 4th Author's Affiliation | Electronics-Inspired Interdisciplinary Research Institute |
| Date | 2013-05-16 |
| Paper # | ED2013-20,CPM2013-5,SDM2013-27 |
| Volume (vol) | vol.113 |
| Number (no) | 40 |
| Page | pp.pp.- |
| #Pages | 4 |
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