| Presentation | 2013-05-16 The process of GaN double polarity selective area growth by using carbon mask Yohei FUJITA, Yasushi TAKANO, Yoku INOUE, Takayuki NAKANO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For nonlinear optical applications using gallium nitride (GaN), periodic inversion of crystallographic orientation (polarity) is required for quasi-phase matching. We developed a novel procedure for designing polarity patterns in GaN using metal organic vapor phase epitaxy (MOVPE), and we used this to fabricate periodic polarity-inverted GaN films. By using a carbon mask for the formation of the selective area, substrate nitriding and mask removal of the selective area were done in the GaN epitaxial growth process. In this report, double polarity selective area growth (DP-SAG) was realized by optimization of nitriding condition and mask removal condition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MOVPE |
| Paper # | ED2013-18,CPM2013-3,SDM2013-25 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2013/5/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The process of GaN double polarity selective area growth by using carbon mask |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MOVPE |
| 1st Author's Name | Yohei FUJITA |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Shizuoka University() |
| 2nd Author's Name | Yasushi TAKANO |
| 2nd Author's Affiliation | Department of Electronics and Materials Science, Shizuoka University |
| 3rd Author's Name | Yoku INOUE |
| 3rd Author's Affiliation | Department of Electronics and Materials Science, Shizuoka University |
| 4th Author's Name | Takayuki NAKANO |
| 4th Author's Affiliation | Department of Electronics and Materials Science, Shizuoka University |
| Date | 2013-05-16 |
| Paper # | ED2013-18,CPM2013-3,SDM2013-25 |
| Volume (vol) | vol.113 |
| Number (no) | 40 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |