Presentation	2013-05-16 Identification of defect structures forming the deep levels in 4H-SiC Hiroki NAKANE, Masashi KATO, Masaya ICHIMURA, Takeshi OHSHIMA,
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Abstract(in English)	To improve the performance of SiC devices, it is necessary to establish a method to control the carrier lifetime. Understanding of physical origins of deep levels is important for establishment of the method. In this work, we have measured deep-levels in 4H-SiC which were irradiated by electrons and subsequently annealed at various temperatures. Then, we compared annealing temperature dependence of signals from deep levels with that of signals reported using the electron paramagnetic resonance method to identify the defect structure of deep level.
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Keyword(in English)	4H-SiC / deep-level / anneal
Paper #	ED2013-17,CPM2013-2,SDM2013-24
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Committee	CPM
Conference Date	2013/5/9(1days)
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Registration To	Component Parts and Materials (CPM)
Language	JPN
Title (in Japanese)	(See Japanese page)
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Title (in English)	Identification of defect structures forming the deep levels in 4H-SiC
Sub Title (in English)
Keyword(1)	4H-SiC
Keyword(2)	deep-level
Keyword(3)	anneal
1st Author's Name	Hiroki NAKANE
1st Author's Affiliation	Nagoya Institute of Technology()
2nd Author's Name	Masashi KATO
2nd Author's Affiliation	Nagoya Institute of Technology
3rd Author's Name	Masaya ICHIMURA
3rd Author's Affiliation	Nagoya Institute of Technology
4th Author's Name	Takeshi OHSHIMA
4th Author's Affiliation	Japan Atomic Energy Agency
Date	2013-05-16
Paper #	ED2013-17,CPM2013-2,SDM2013-24
Volume (vol)	vol.113
Number (no)	40
Page	pp.pp.-
#Pages	6
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