| Presentation | 2013-02-27 Al_2O_3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate Koichi MAEZAWA, Taihei ITO, Azusa KADODA, Koji NAKAYAMA, Yuichiro YASUI, Masayuki MORI, Eiji MIYAZAKI, Takashi MIZUTANI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Al_2O_3/InSb/Si MOSFETs were fabricated with a thin InSb channel layer grown directly on Si(111) substrates. The InSb thickness was ranging from 6 to 25 nm. These thicknesses are close to the critical thickness of the InSb on Si, when the InSb layer is grown using special technique called surface reconstruction controlled epitaxy, which reduces the lattice mismatch from 19.3 to 3.3 % by rotating the in-plane InSb axis by 30-degrees with respect to the Si(111) substrate Good FET characteristics were observed for 10-nm InSb channel devices The dependence of the device properties on the InSb channel thickness were investigated. The enhancement of the effective mobility for thin InSb channel devices was demonstrated, which indicates the crystal quality improvement for quasi pseudomorphic channels. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / InSb / Al2O3 / Molecular Beam Epitaxy / lattice mismatch |
| Paper # | ED2012-135,SDM2012-164 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2013/2/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Al_2O_3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | InSb |
| Keyword(3) | Al2O3 |
| Keyword(4) | Molecular Beam Epitaxy |
| Keyword(5) | lattice mismatch |
| 1st Author's Name | Koichi MAEZAWA |
| 1st Author's Affiliation | Graduate School of Science and Engineering, University of Toyama() |
| 2nd Author's Name | Taihei ITO |
| 2nd Author's Affiliation | Graduate School of Science and Engineering, University of Toyama |
| 3rd Author's Name | Azusa KADODA |
| 3rd Author's Affiliation | Graduate School of Science and Engineering, University of Toyama |
| 4th Author's Name | Koji NAKAYAMA |
| 4th Author's Affiliation | Graduate School of Science and Engineering, University of Toyama |
| 5th Author's Name | Yuichiro YASUI |
| 5th Author's Affiliation | Graduate School of Science and Engineering, University of Toyama |
| 6th Author's Name | Masayuki MORI |
| 6th Author's Affiliation | Graduate School of Science and Engineering, University of Toyama |
| 7th Author's Name | Eiji MIYAZAKI |
| 7th Author's Affiliation | Graduate School of Engineering, Nagoya University |
| 8th Author's Name | Takashi MIZUTANI |
| 8th Author's Affiliation | Graduate School of Engineering, Nagoya University |
| Date | 2013-02-27 |
| Paper # | ED2012-135,SDM2012-164 |
| Volume (vol) | vol.112 |
| Number (no) | 445 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |