Presentation 2013-01-25
All-Organic Self-Aligned Field-Effect Transistors
Tatsunori MURAMOTO, Shigeki NAKA, Hiroyuki OKADA,
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Abstract(in English) All-organic self-aligned field-effect transistors using the back-surface exposure method were investigated. For device fabrication, where, gate electrode as a photomask, source and drain electrodes of thin silver nanoparticle was patterned and self-alignment structure was fabricated. Obtained transmittance of 20% at film thickness of 400 A for silver nanoparticle. Overlap of gate and pattern of photoresist was increased with the back-surface exposure time and obtained overlap length of the gate-source and -drain electrodes was 2 gm. For device characteristics, transistor operation of evaluated field effect mobility, threshold and on-off ratio were 0.012cm^2/Vs, 12V, and 1.5×10^3, respectively, were obtained.
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Keyword(in English) Organic FET / Pentacene / Self-alignment / Solution-process
Paper # EID2012-23
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Committee EID
Conference Date 2013/1/17(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) All-Organic Self-Aligned Field-Effect Transistors
Sub Title (in English)
Keyword(1) Organic FET
Keyword(2) Pentacene
Keyword(3) Self-alignment
Keyword(4) Solution-process
1st Author's Name Tatsunori MURAMOTO
1st Author's Affiliation Graduate School of Science and Engineering for Research()
2nd Author's Name Shigeki NAKA
2nd Author's Affiliation Graduate School of Science and Engineering for Research
3rd Author's Name Hiroyuki OKADA
3rd Author's Affiliation Graduate School of Science and Engineering for Research:Center for Research and Development in Natural Sciences
Date 2013-01-25
Paper # EID2012-23
Volume (vol) vol.112
Number (no) 409
Page pp.pp.-
#Pages 4
Date of Issue