Presentation 2013/1/23
Progress of STT-MRAM Technology and the Effect on Normally-off Computing Systems
H. Ybda, S. Fujita, N. Shimomura, E. Kitagawa, K. Abe, K. Nomura, K. Noguchi, J. Ito,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We propose a new processor using STT MRAMs as cache memories It enables "Normally-off computing", where the processor is normally power off In order to achieve power reduction by the normally-off computing, fast and low current writing to the MTJ is necessary We developed the MTJ technology using the perpendicular magnetization MTJ, whose write current pulses are fast and low enough to realize the normally-off computing.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MRAM / spin transfer torque / MTJ / Normally-off computing
Paper # SDM2012-148
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Committee SDM
Conference Date 2013/1/23(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Progress of STT-MRAM Technology and the Effect on Normally-off Computing Systems
Sub Title (in English)
Keyword(1) MRAM
Keyword(2) spin transfer torque
Keyword(3) MTJ
Keyword(4) Normally-off computing
1st Author's Name H. Ybda
1st Author's Affiliation Center For Semiconductor Research & Development, Toshiba Corporation,()
2nd Author's Name S. Fujita
2nd Author's Affiliation Corporate R&D Center, Toshiba Corporation
3rd Author's Name N. Shimomura
3rd Author's Affiliation Corporate R&D Center, Toshiba Corporation
4th Author's Name E. Kitagawa
4th Author's Affiliation Corporate R&D Center, Toshiba Corporation
5th Author's Name K. Abe
5th Author's Affiliation Corporate R&D Center, Toshiba Corporation
6th Author's Name K. Nomura
6th Author's Affiliation Corporate R&D Center, Toshiba Corporation
7th Author's Name K. Noguchi
7th Author's Affiliation Corporate R&D Center, Toshiba Corporation
8th Author's Name J. Ito
8th Author's Affiliation Corporate R&D Center, Toshiba Corporation
Date 2013/1/23
Paper # SDM2012-148
Volume (vol) vol.112
Number (no) 421
Page pp.pp.-
#Pages 2
Date of Issue