Presentation	2013/1/10 InGaAs HEMTs with T-gate electrodes foemed by multi-layer SiCN molds Tomohiro YOSHIDA, Kengo KOBAYASHI, Tanchi OTSUJI, Tetsuya SUEMITSU,
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Abstract(in English)	Recently, the gate lengths of HEMTs have been achieved below 0.1 μm In general, T-gate electrodes are employed for such short-gate HEMTs to reduce the gate resistance and thereby to increase the maximum frequency of oscillation (f_) However, it is reported that the gate parasitic capacitance causes the degradation in fT In addition, short gate electrodes with high aspect ratio cause a fault in connection between the bottom and top of the T-gate electrodes Thus, T-gate electrodes must be fabncated more precisely to resolve these problems We report a method to control the shape of T-gates precisely by using multi-layer SiCN molds The SiCN molds consist of a senes of SiCN thin films with gradually changed etching properties The SiCN mold technique was applied to the fabrication of T-gates in InGaAs high electron mobility transistors (HEMTs) Two types of HEMTs using the SiCN molds with different T-gate shapes were fabricated by SiCN molds with different deposition conditions The detail analysis of the HEMTs indicates that the difference in the parasitic gate delay and gate resistance reflects the T-gate shapes
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Keyword(in English)	HEMTs / InP / InGaAs / HMDS / gate fabrication / gate delay
Paper #	ED2012-127
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Committee	MW
Conference Date	2013/1/10(1days)
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Paper Information
Registration To	Microwaves (MW)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	InGaAs HEMTs with T-gate electrodes foemed by multi-layer SiCN molds
Sub Title (in English)
Keyword(1)	HEMTs
Keyword(2)	InP
Keyword(3)	InGaAs
Keyword(4)	HMDS
Keyword(5)	gate fabrication
Keyword(6)	gate delay
1st Author's Name	Tomohiro YOSHIDA
1st Author's Affiliation	Research Institute of Electncal Communication (RIEC), Tohoku University()
2nd Author's Name	Kengo KOBAYASHI
2nd Author's Affiliation	Research Institute of Electncal Communication (RIEC), Tohoku University
3rd Author's Name	Tanchi OTSUJI
3rd Author's Affiliation	Research Institute of Electncal Communication (RIEC), Tohoku University
4th Author's Name	Tetsuya SUEMITSU
4th Author's Affiliation	Research Institute of Electncal Communication (RIEC), Tohoku University
Date	2013/1/10
Paper #	ED2012-127
Volume (vol)	vol.112
Number (no)	381
Page	pp.pp.-
#Pages	6
Date of Issue