Presentation 2013/1/10
Analysis of drain leakage current in AIGaN/GaN HEMT
Kazuo HAYASHI, Toshiyuki OISHI, Yoshitaka KAMO, Yutaro YAMAGUCHI, Hiroshi OTSUKA, Koji YAMANAKA, Masatoshi NAKAYAMA, Yasuyuki MIYAMOTO,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Traps in GaN layer of AlGaN/GaN HEMTs have been studied by using both experimental data and TCAD simulation Two traps with activation energies of 0.15 and 0.5 eV are estimated from drain current versus drain voltage curves below pinch-off voltage at various temperatures Furthermore, the drain leakage current is found to decrease as the trap density increases From TCAD simulation, the decrease of the drain leakage current results from the increase of conduction band due to the traps with negative charges in GaN layer
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlGaN/GaN HEMT / trap / TCAD simulation / drain leakage current
Paper # ED2012-125
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Conference Date 2013/1/10(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of drain leakage current in AIGaN/GaN HEMT
Sub Title (in English)
Keyword(1) AlGaN/GaN HEMT
Keyword(2) trap
Keyword(3) TCAD simulation
Keyword(4) drain leakage current
1st Author's Name Kazuo HAYASHI
1st Author's Affiliation Mitsubishi Electric Corporation.()
2nd Author's Name Toshiyuki OISHI
2nd Author's Affiliation Mitsubishi Electric Corporation.
3rd Author's Name Yoshitaka KAMO
3rd Author's Affiliation Mitsubishi Electric Corporation.
4th Author's Name Yutaro YAMAGUCHI
4th Author's Affiliation Mitsubishi Electric Corporation.
5th Author's Name Hiroshi OTSUKA
5th Author's Affiliation Mitsubishi Electric Corporation.
6th Author's Name Koji YAMANAKA
6th Author's Affiliation Mitsubishi Electric Corporation.
7th Author's Name Masatoshi NAKAYAMA
7th Author's Affiliation Mitsubishi Electric Corporation.
8th Author's Name Yasuyuki MIYAMOTO
8th Author's Affiliation Tokyo Institute of Technology
Date 2013/1/10
Paper # ED2012-125
Volume (vol) vol.112
Number (no) 381
Page pp.pp.-
#Pages 6
Date of Issue