Presentation 2013/1/10
2.6GHz Broadband 40W GaN HEMT Doherty Amplifier
Norihiro Yoshimura, Naoki Watanabe, Hiroaki Deguchi, Norihiko Ui,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A40W average output power asymmetric Doheny power amplifier for 2.6GHz band was developed using broadband inverse class F GaN HEMTs Th eDoherty PA was successfhlly designed for 2.5GHz-2.7GHz using simple small signal analysis with optimum load impedance obtained by load-pull measurement To the main and peak amplifiers the saturated power of 105W and 160W GaN HEMTs wer eapplied, respectively The Doherty PA exhibited more than 54.3dBm(269W)saturated power and more than 45% drain efficiency with-52.5dBc ACLR at 8dB back-off point with 2-carrier W-CDMA signal over the wide frequency range of 2.5GHz-2.7GHz corrected by the digital pre-distortion (DPD)system The seexcellent performances promise to be a good solution for 2.6 GHz multi-band/multi-standard base-station transmitter system(BTS) such as FDD-LTE,TDD-LTE and W1MAX
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / HEMT / broadband / high power / Doherty amplifier
Paper # ED2012-120
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Committee MW
Conference Date 2013/1/10(1days)
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Paper Information
Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 2.6GHz Broadband 40W GaN HEMT Doherty Amplifier
Sub Title (in English)
Keyword(1) GaN
Keyword(2) HEMT
Keyword(3) broadband
Keyword(4) high power
Keyword(5) Doherty amplifier
1st Author's Name Norihiro Yoshimura
1st Author's Affiliation Sumitomo Electric Device Innovations()
2nd Author's Name Naoki Watanabe
2nd Author's Affiliation Sumitomo Electric Device Innovations
3rd Author's Name Hiroaki Deguchi
3rd Author's Affiliation Sumitomo Electric Device Innovations
4th Author's Name Norihiko Ui
4th Author's Affiliation Sumitomo Electric Device Innovations
Date 2013/1/10
Paper # ED2012-120
Volume (vol) vol.112
Number (no) 381
Page pp.pp.-
#Pages 4
Date of Issue