Presentation 2013-01-16
Dynamic Multi-Vth Control Using Body Biasing in Silicon on Thin Buried Oxide(SOTB)
Shinya AJIRO, Masaru KUDO, Kimiyoshi USAMI,
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Abstract(in English) Silicon on thin BOX(SOTB) is an FD-SOI device being possible to operate with ultra-low voltage of 0 4V and greatly change the threshold voltage of a transistor by body biasing. In this research, we propose a design technique that realizes multi-vth using body biasing. In this technique, after designing the circuit which consists of only high threshold transistors, the threshold voltage is lowered only at the area which needs high-speed operation by applying body bias. Results of applying the proposed technique to 32bit adder design showed that leakage power can be reduced by approximately 43% without increasing delay time compared with the circuit with only normal threshold voltage.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SOI / Thin BOX / Body Bias / Multi-Vth / Leakage power
Paper # VLD2012-120,CPSY2012-69,RECONF2012-74
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Committee RECONF
Conference Date 2013/1/9(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Dynamic Multi-Vth Control Using Body Biasing in Silicon on Thin Buried Oxide(SOTB)
Sub Title (in English)
Keyword(1) SOI
Keyword(2) Thin BOX
Keyword(3) Body Bias
Keyword(4) Multi-Vth
Keyword(5) Leakage power
1st Author's Name Shinya AJIRO
1st Author's Affiliation Shibaura Institute of Technology()
2nd Author's Name Masaru KUDO
2nd Author's Affiliation Shibaura Institute of Technology
3rd Author's Name Kimiyoshi USAMI
3rd Author's Affiliation Shibaura Institute of Technology
Date 2013-01-16
Paper # VLD2012-120,CPSY2012-69,RECONF2012-74
Volume (vol) vol.112
Number (no) 377
Page pp.pp.-
#Pages 6
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