| Presentation | 2013/1/10 Analysis of Lag Phenomena,Current Collapse and Breakdown Characteristics in Source-Field-Plate AIGaN/GaN HEMTs Hideyuki HANAWA, Hiraku ONODERA, Kazushige HORIO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Two-dimensional analysis of lag phenomena, current collapse and breakdown voltages in source-field-plate AlGaN/GaN HEMTs is performed, and the results are compared with those for the case of gate-field-plate structure It is shown that the reduction rate of drain-lag is similar between the two structures, but the reduction rates of gate lag and current collapse are smaller for the source-field-plate structure This is because the electnc field at the drain edge of the gate becomes higher in the off state and the trapping effects become more significant For this reason, the off-state breakdown voltage is a little lower in the source-field-plate structure It is suggested that there is an optimum thickness of SiN passivation layer to minimize the buffer-related current collapse in both structures |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / HEMT / field plate / lag phenomena / current collapse / breakdown voltage / two-dimensional analysis |
| Paper # | ED2012-123 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2013/1/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Lag Phenomena,Current Collapse and Breakdown Characteristics in Source-Field-Plate AIGaN/GaN HEMTs |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HEMT |
| Keyword(3) | field plate |
| Keyword(4) | lag phenomena |
| Keyword(5) | current collapse |
| Keyword(6) | breakdown voltage |
| Keyword(7) | two-dimensional analysis |
| 1st Author's Name | Hideyuki HANAWA |
| 1st Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology() |
| 2nd Author's Name | Hiraku ONODERA |
| 2nd Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology |
| 3rd Author's Name | Kazushige HORIO |
| 3rd Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology |
| Date | 2013/1/10 |
| Paper # | ED2012-123 |
| Volume (vol) | vol.112 |
| Number (no) | 380 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |