Presentation | 2013/1/10 The study of SSPS GaN amplifier for high-efficiency operation by gate length Yutaro YAMAGUCHI, Toshiyuki OISHI, Hiroshi OTSUKA, Takaaki YOSHIOKA, Hidetoshi KOYAMA, Fuminori SAMEJIMA, Yoshinori TSUYAMA, Koji YAMANAKA, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In this paper, GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented 0.25μm gate length GaN HEMT which has high cut-off frequency was used for amplifier The device has an effect on not only 2nd harmonic but also 3rd harmonic The matching circuit was designed so that 2nd and 3rd harmonics are tuned to obtain maximum power added efficiency (PAE) PAE of 75% was successfully obtained with 7W output power at 5.8GHz |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | High-voltage techniques / MODFET power amplifiers |
Paper # | ED2012-121 |
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Conference Information | |
Committee | ED |
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Conference Date | 2013/1/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | The study of SSPS GaN amplifier for high-efficiency operation by gate length |
Sub Title (in English) | |
Keyword(1) | High-voltage techniques |
Keyword(2) | MODFET power amplifiers |
1st Author's Name | Yutaro YAMAGUCHI |
1st Author's Affiliation | Information Technology R&D Center, Mitsubishi Electric Corporation,() |
2nd Author's Name | Toshiyuki OISHI |
2nd Author's Affiliation | Information Technology R&D Center, Mitsubishi Electric Corporation, |
3rd Author's Name | Hiroshi OTSUKA |
3rd Author's Affiliation | Information Technology R&D Center, Mitsubishi Electric Corporation, |
4th Author's Name | Takaaki YOSHIOKA |
4th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation, |
5th Author's Name | Hidetoshi KOYAMA |
5th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation, |
6th Author's Name | Fuminori SAMEJIMA |
6th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation, |
7th Author's Name | Yoshinori TSUYAMA |
7th Author's Affiliation | Communication Systems Center, Mitsubishi Electric Corporation, |
8th Author's Name | Koji YAMANAKA |
8th Author's Affiliation | Information Technology R&D Center, Mitsubishi Electric Corporation, |
Date | 2013/1/10 |
Paper # | ED2012-121 |
Volume (vol) | vol.112 |
Number (no) | 380 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |