Presentation 2013-01-25
Development of scale down testbed for high voltage power device
Takashi MATSUYOSHI, Msanori TSUKUDA, Hidetoshi HIRAI, Ichiro OMURA,
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Abstract(in English) The testbed for high voltage power device evaluation was developed. This testbed is constituted by special device package, aluminum block, etc, and realizes a super-low stray inductance. Moreover, ideal switching property evaluation became possible by using this testbed. This testbed is used for measurement of the ultimate performance of a power device, construction of a compact model and the advancement of the gate drive.
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Keyword(in English) testbed / press-pack / high voltage power device / stray inductance / stray capacitance
Paper # EE2012-46,CPM2012-168
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Conference Information
Committee EE
Conference Date 2013/1/17(1days)
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Paper Information
Registration To Energy Engineering in Electronics and Communications (EE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of scale down testbed for high voltage power device
Sub Title (in English)
Keyword(1) testbed
Keyword(2) press-pack
Keyword(3) high voltage power device
Keyword(4) stray inductance
Keyword(5) stray capacitance
1st Author's Name Takashi MATSUYOSHI
1st Author's Affiliation Kyushu Institute of Technology()
2nd Author's Name Msanori TSUKUDA
2nd Author's Affiliation Kyushu Institute of Technology:The Int'l Centre for the Study of East Asian Development
3rd Author's Name Hidetoshi HIRAI
3rd Author's Affiliation Kyushu Institute of Technology
4th Author's Name Ichiro OMURA
4th Author's Affiliation Kyushu Institute of Technology
Date 2013-01-25
Paper # EE2012-46,CPM2012-168
Volume (vol) vol.112
Number (no) 396
Page pp.pp.-
#Pages 5
Date of Issue