Presentation 2013-03-06
A Study of RF Front-end IC with a wideband low-noise variable-gain amplifier
Yo YAMAGUCHI, Takana KAHO, Munenari KAWASHIMA, Hideki TOSHINAGA, Kazuhiro UEHARA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) It is necessary to know that use status of frequencies for high-degree frequency use. Therefore, it is necessary that the RF front-end IC for the sensing device has both wide bandwidth low noise characteristics and wide bandwidth variable gain characteristics. This paper exhibits a RF front-end IC which keeps the noise figure below 4 dB with 10 dB gain control range over 400 MHz to 6GHz.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) wide frequency range / low noise / bariable gain / RF front-end IC
Paper # MW2012-161
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Committee MW
Conference Date 2013/2/27(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Study of RF Front-end IC with a wideband low-noise variable-gain amplifier
Sub Title (in English)
Keyword(1) wide frequency range
Keyword(2) low noise
Keyword(3) bariable gain
Keyword(4) RF front-end IC
1st Author's Name Yo YAMAGUCHI
1st Author's Affiliation NTT Network Innovation Laboratories, NTT Corporation()
2nd Author's Name Takana KAHO
2nd Author's Affiliation NTT Network Innovation Laboratories, NTT Corporation
3rd Author's Name Munenari KAWASHIMA
3rd Author's Affiliation NTT Network Innovation Laboratories, NTT Corporation
4th Author's Name Hideki TOSHINAGA
4th Author's Affiliation NTT Network Innovation Laboratories, NTT Corporation
5th Author's Name Kazuhiro UEHARA
5th Author's Affiliation NTT Network Innovation Laboratories, NTT Corporation
Date 2013-03-06
Paper # MW2012-161
Volume (vol) vol.112
Number (no) 459
Page pp.pp.-
#Pages 4
Date of Issue