Presentation 2013-03-08
Structure and Characteristics of Pentacene Field-Effect Transistors with Carrier Generation Layer
Shun Usuba, Akira Baba, Kazunari Shinbo, Keizo Kato, Futao Kaneko, Masahiro Minagawa,
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Abstract(in English) In this study, carrier generation layers which have been used in organic light-emitting diodes were adopted to organic field-effect transistors. The drain current of the pentacene FET with carrier generation layer of vanadium pentoxide (V_2O_5)was 2.5 times as large as that without the layer. Furthermore, remarkable effect was observed by inserting co-evaporation layer of V_2O_5 and pentacene. It was considered that formations of a charge-transfer (CT)complex of V_2O_5 and pentacene was related to the large drain currents, and formation of CT-complex was significant in co-evaporation layer.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Vanadium Pentoxide / Pentacene / Carrier generation layer / OFET
Paper # OME2012-107
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Committee OME
Conference Date 2013/3/1(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Structure and Characteristics of Pentacene Field-Effect Transistors with Carrier Generation Layer
Sub Title (in English)
Keyword(1) Vanadium Pentoxide
Keyword(2) Pentacene
Keyword(3) Carrier generation layer
Keyword(4) OFET
1st Author's Name Shun Usuba
1st Author's Affiliation Niigata University()
2nd Author's Name Akira Baba
2nd Author's Affiliation Niigata University
3rd Author's Name Kazunari Shinbo
3rd Author's Affiliation Niigata University
4th Author's Name Keizo Kato
4th Author's Affiliation Niigata University
5th Author's Name Futao Kaneko
5th Author's Affiliation Niigata University
6th Author's Name Masahiro Minagawa
6th Author's Affiliation Nagaoka National College of Technology
Date 2013-03-08
Paper # OME2012-107
Volume (vol) vol.112
Number (no) 469
Page pp.pp.-
#Pages 4
Date of Issue