Presentation 2013-03-08
Study of current driven domain wall in CoB/Ni nanowire : Basic research of magnetic nanowire memory
Hiroyuki AWANO, Duc the NGO,
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Abstract(in English) Warning that a shortage of storage as well as water and electricity by the rapid economic growth of emerging countries has been sounded. Even If someone increases the production of a lot of storage devices to solve this problem, they can not be used because of shortage of electric power. In order to solve the problem, a new storage device named as solid state magnetic memory(low power consumption and huge data capacity)should be studied In this presentation, we will report about a basic study of CoB/Ni magnetic nanowire memory as a one solution.
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Keyword(in English) Magnetic wire memory / Current driven domain wall / Solid state magnetic memory / CoB/Ni multilayer
Paper # MR2012-52
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Committee MR
Conference Date 2013/3/1(1days)
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Registration To Magnetic Recording (MR)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study of current driven domain wall in CoB/Ni nanowire : Basic research of magnetic nanowire memory
Sub Title (in English)
Keyword(1) Magnetic wire memory
Keyword(2) Current driven domain wall
Keyword(3) Solid state magnetic memory
Keyword(4) CoB/Ni multilayer
1st Author's Name Hiroyuki AWANO
1st Author's Affiliation Toyota Technological Institute()
2nd Author's Name Duc the NGO
2nd Author's Affiliation Toyota Technological Institute
Date 2013-03-08
Paper # MR2012-52
Volume (vol) vol.112
Number (no) 452
Page pp.pp.-
#Pages 3
Date of Issue