Presentation 2012-09-18
The LSI Design Methodology of Tamper Resistant Cryptographic Circuit
Takeshi FUJINO, Mitsuru SHIOZAKI, Takaya KUBOTA, Masaya Yoshikawa,
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Abstract(in English) Tamper LSI Design Methodology have to be applied in order to implement secure cryptographic circuit which is resistant to side-channel attack such as DPA(Differential Power Analysis). The principle of DPA, some typical countermeasures against DPA, and the problem on the LSI implementation are introduced in this paper. The "dual-rail RSL memory" which consumes constant power irrespective of input/output value, is developed. The cryptographic design methodology, in which the "dual-rail RSL memory" is used on a non-linear circuit, and the additive masked logic using XOR gate is used on a linear circuit, is easy to be implemented on SoC, because these methods are easy to be implemented in the conventional LSI design flow. The AES cryptographic circuit, which is the most popular cryptographic algolithm, was designed in O.18 um CMOS technology. The test chip demonstrates the high tamper resistance against power analysis.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Tamper Resistant LSI / Side-Channel Attack / AES / DPA / CPA / WDDL / RSL / Dual-rail RSL Memory
Paper # RECONF2012-29
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Conference Information
Committee RECONF
Conference Date 2012/9/11(1days)
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Paper Information
Registration To Reconfigurable Systems (RECONF)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The LSI Design Methodology of Tamper Resistant Cryptographic Circuit
Sub Title (in English)
Keyword(1) Tamper Resistant LSI
Keyword(2) Side-Channel Attack
Keyword(3) AES
Keyword(4) DPA
Keyword(5) CPA
Keyword(6) WDDL
Keyword(7) RSL
Keyword(8) Dual-rail RSL Memory
1st Author's Name Takeshi FUJINO
1st Author's Affiliation Faculty of Science and Engineering Ritsumeikan University()
2nd Author's Name Mitsuru SHIOZAKI
2nd Author's Affiliation Research Organization of Science and Engineering Ritsumeikan University
3rd Author's Name Takaya KUBOTA
3rd Author's Affiliation Research Organization of Science and Engineering Ritsumeikan University
4th Author's Name Masaya Yoshikawa
4th Author's Affiliation Faculty of Science and Engineering Meij o University
Date 2012-09-18
Paper # RECONF2012-29
Volume (vol) vol.112
Number (no) 203
Page pp.pp.-
#Pages 6
Date of Issue