| Presentation | 2012-12-07 Change of Scattering Mechanisms of Holes in SiC by Electron Irradiation Kohji Murata, Tatsuya Morine, Hideharu Matsuura, Shinobu Onoda, Takeshi Ohshima, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | SiC has advantages of higher resistance to radiation and higher breakdown electric field, compared with Si. Therefore, SiC attracts attention as a next-generation power device. Although the designs for semiconductor device structures require a lot of electrical properties in semiconductors, however, there is little information on SiC, especially related with resistance to radiation. In our laboratory, therefore, the temperature dependences of majority-carrier concentrations and mobilities in SiC have been measured by Hall-effect measurements using the van der Pauw method. As a result, it turns out that the irradiation of high-energy electrons to Al-doped SiC reduces the hole concentration and mobility. In this study, we simulate the temperature dependences of hole mobilities due to several scattering mechanisms, and discuss the hole scattering mechanism which affects the experimentally-obtained hole mobility the most. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 4H-SiC / Electron Irradiation / Mobility / Scattering Mechanisms |
| Paper # | SDM2012-117 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2012/11/30(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Change of Scattering Mechanisms of Holes in SiC by Electron Irradiation |
| Sub Title (in English) | |
| Keyword(1) | 4H-SiC |
| Keyword(2) | Electron Irradiation |
| Keyword(3) | Mobility |
| Keyword(4) | Scattering Mechanisms |
| 1st Author's Name | Kohji Murata |
| 1st Author's Affiliation | Osaka Electro-Communication University() |
| 2nd Author's Name | Tatsuya Morine |
| 2nd Author's Affiliation | Osaka Electro-Communication University |
| 3rd Author's Name | Hideharu Matsuura |
| 3rd Author's Affiliation | Osaka Electro-Communication University |
| 4th Author's Name | Shinobu Onoda |
| 4th Author's Affiliation | Japan Atomic Energy Agency |
| 5th Author's Name | Takeshi Ohshima |
| 5th Author's Affiliation | Japan Atomic Energy Agency |
| Date | 2012-12-07 |
| Paper # | SDM2012-117 |
| Volume (vol) | vol.112 |
| Number (no) | 337 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |