Presentation | 2012-12-18 ED2012-106 High Frequency Performance of GaAsSb/InGaAs Tunnel Diodes Mikhail PATRASHIN, Norihiko SEKINE, Akifumi KASAMATSU, Issei WATANABE, Iwao HOSAKO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Increasing interest to high-resolution active and passive MMW-THz imaging and high-speed wireless data communications motivates development of novel devices and systems operating beyond 100 GHz. Among various detector technologies, zero-bias heterostructure tunnel diodes based on III-V compound semiconductors have promising characteristics, such as reduced 1/f noise, higher operational frequencies due to small device capacitances, and feasibility of monolithic integration of the detectors with low noise amplifier (LNA) circuits. We evaluated performance of InP-based, zero-bias, square-law GaAsSb/InAlAs/InGaAs tunnel diodes for direct detection at frequencies up to 330 GHz. The detectors with submicron cross-sectional area demonstrated sensitivities above 500 V/W. Optimization of the device structure can improve the sensitivity and the cut-off frequency. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Semiconductor heterostructures / tunnel diodes / millimeter wave detectors / millimeter wave imaging / MMICs |
Paper # | ED2012-106 |
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Conference Information | |
Committee | ED |
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Conference Date | 2012/12/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | ED2012-106 High Frequency Performance of GaAsSb/InGaAs Tunnel Diodes |
Sub Title (in English) | |
Keyword(1) | Semiconductor heterostructures |
Keyword(2) | tunnel diodes |
Keyword(3) | millimeter wave detectors |
Keyword(4) | millimeter wave imaging |
Keyword(5) | MMICs |
1st Author's Name | Mikhail PATRASHIN |
1st Author's Affiliation | Fujitsu Laboratories Ltd() |
2nd Author's Name | Norihiko SEKINE |
2nd Author's Affiliation | Fujitsu Laboratories Ltd |
3rd Author's Name | Akifumi KASAMATSU |
3rd Author's Affiliation | Fujitsu Laboratories Ltd |
4th Author's Name | Issei WATANABE |
4th Author's Affiliation | Fujitsu Laboratories Ltd |
5th Author's Name | Iwao HOSAKO |
5th Author's Affiliation | Fujitsu Laboratories Ltd |
Date | 2012-12-18 |
Paper # | ED2012-106 |
Volume (vol) | vol.112 |
Number (no) | 364 |
Page | pp.pp.- |
#Pages | 2 |
Date of Issue |