Presentation 2012-12-18
ED2012-106 High Frequency Performance of GaAsSb/InGaAs Tunnel Diodes
Mikhail PATRASHIN, Norihiko SEKINE, Akifumi KASAMATSU, Issei WATANABE, Iwao HOSAKO,
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Abstract(in English) Increasing interest to high-resolution active and passive MMW-THz imaging and high-speed wireless data communications motivates development of novel devices and systems operating beyond 100 GHz. Among various detector technologies, zero-bias heterostructure tunnel diodes based on III-V compound semiconductors have promising characteristics, such as reduced 1/f noise, higher operational frequencies due to small device capacitances, and feasibility of monolithic integration of the detectors with low noise amplifier (LNA) circuits. We evaluated performance of InP-based, zero-bias, square-law GaAsSb/InAlAs/InGaAs tunnel diodes for direct detection at frequencies up to 330 GHz. The detectors with submicron cross-sectional area demonstrated sensitivities above 500 V/W. Optimization of the device structure can improve the sensitivity and the cut-off frequency.
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Keyword(in English) Semiconductor heterostructures / tunnel diodes / millimeter wave detectors / millimeter wave imaging / MMICs
Paper # ED2012-106
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Committee ED
Conference Date 2012/12/10(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) ED2012-106 High Frequency Performance of GaAsSb/InGaAs Tunnel Diodes
Sub Title (in English)
Keyword(1) Semiconductor heterostructures
Keyword(2) tunnel diodes
Keyword(3) millimeter wave detectors
Keyword(4) millimeter wave imaging
Keyword(5) MMICs
1st Author's Name Mikhail PATRASHIN
1st Author's Affiliation Fujitsu Laboratories Ltd()
2nd Author's Name Norihiko SEKINE
2nd Author's Affiliation Fujitsu Laboratories Ltd
3rd Author's Name Akifumi KASAMATSU
3rd Author's Affiliation Fujitsu Laboratories Ltd
4th Author's Name Issei WATANABE
4th Author's Affiliation Fujitsu Laboratories Ltd
5th Author's Name Iwao HOSAKO
5th Author's Affiliation Fujitsu Laboratories Ltd
Date 2012-12-18
Paper # ED2012-106
Volume (vol) vol.112
Number (no) 364
Page pp.pp.-
#Pages 2
Date of Issue