Presentation 2012-11-30
Approaches for improving efficiency of AlGaN-based deep-UV LEDs
Yuji TOMITA, Hideki HIRAYAMA, Sachie FUJIKAWA, Katsuya MIZUSAWA, Shiro TOYODA, Norihiko KAMATA,
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Abstract(in English) A connected-pillar AlN buffer structure fabricated on sapphire substrate is considered to be quite effective for increasing efficiency of AlGaN based deep-ultraviolet (DUV) LEDs, because of improving internal quantum efficiency (IQE) due to reduced threading-dislocation density (TDD), and light-extraction efficiency (LEE). In this study, we demonstrated the fabrication of connected-pillar AlN structure buffer on patterned-sapphire substrates (PSS) by using an 'NH_3 pulsed flow multi-layer growth' method and an epitaxial lateral overgrowth (ELO). We obtained output power of 5.5mW from 265nm AlGaN-based DUV-LED fabricated on connected-pillar AlN buffer on PSS under room temperature CW operation.
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Keyword(in English) DUV-LED / MOCVD / AlN / AlGaN / Connected pillar
Paper # ED2012-84,CPM2012-141,LQE2012-112
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Conference Information
Committee LQE
Conference Date 2012/11/22(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Approaches for improving efficiency of AlGaN-based deep-UV LEDs
Sub Title (in English)
Keyword(1) DUV-LED
Keyword(2) MOCVD
Keyword(3) AlN
Keyword(4) AlGaN
Keyword(5) Connected pillar
1st Author's Name Yuji TOMITA
1st Author's Affiliation Saitama University()
2nd Author's Name Hideki HIRAYAMA
2nd Author's Affiliation RIKEN
3rd Author's Name Sachie FUJIKAWA
3rd Author's Affiliation RIKEN
4th Author's Name Katsuya MIZUSAWA
4th Author's Affiliation Saitama University
5th Author's Name Shiro TOYODA
5th Author's Affiliation Saitama University
6th Author's Name Norihiko KAMATA
6th Author's Affiliation Saitama University
Date 2012-11-30
Paper # ED2012-84,CPM2012-141,LQE2012-112
Volume (vol) vol.112
Number (no) 329
Page pp.pp.-
#Pages 6
Date of Issue