| Presentation | 2012-11-30 Mg acceptor activation in p-GaN of the structure with n-GaN surface Yuka KUWANO, Mitsuru KAGA, Takatoshi MORITA, Kouji YAMASHITA, TAKEUCHI Tetsuya /, Motoaki IWAYA, Satoshi KAMIYAMA, Isamu AKASAKI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Thermal annealing step is required to dissociate acceptor-hydrogen complexes and electrically activate the acceptor dopants in Mg-doped GaN. Meanwhile several groups have reported that hydrogen atoms did not exist in n-GaN. Therefore, it is suggested that desorption of hydrogen atoms from p-GaN entirely covered with n-GaN surfaces should be suppressed, resulting in insufficient Mg activation. In this paper, we investigated Mg activation in p-GaN and tunnel junction p^<++>-GaInN covered with n-GaN surfaces. We optimized device fabrication process including the thermal annealing step and evaluated current-voltage characteristics. As a result, we found that Mg activation from the surfaces was inhibited due to the n-GaN surfaces and laterally extend from etched sidewalls in the LED structure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Tunnel Junction / nitride semiconductors / GaN / Mg / activation annealing / hydrogen |
| Paper # | ED2012-83,CPM2012-140,LQE2012-111 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Mg acceptor activation in p-GaN of the structure with n-GaN surface |
| Sub Title (in English) | |
| Keyword(1) | Tunnel Junction |
| Keyword(2) | nitride semiconductors |
| Keyword(3) | GaN |
| Keyword(4) | Mg |
| Keyword(5) | activation annealing |
| Keyword(6) | hydrogen |
| 1st Author's Name | Yuka KUWANO |
| 1st Author's Affiliation | Fac. Sci. & Eng., Meijo University() |
| 2nd Author's Name | Mitsuru KAGA |
| 2nd Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 3rd Author's Name | Takatoshi MORITA |
| 3rd Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 4th Author's Name | Kouji YAMASHITA |
| 4th Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 5th Author's Name | TAKEUCHI Tetsuya / |
| 5th Author's Affiliation | / Fac. Sci. & Eng., Meijo University |
| 6th Author's Name | Motoaki IWAYA |
| 6th Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 7th Author's Name | Satoshi KAMIYAMA |
| 7th Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 8th Author's Name | Isamu AKASAKI |
| 8th Author's Affiliation | Fac. Sci. & Eng., Meijo University:Akasaki Research Center, Nagoya University |
| Date | 2012-11-30 |
| Paper # | ED2012-83,CPM2012-140,LQE2012-111 |
| Volume (vol) | vol.112 |
| Number (no) | 329 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |