Presentation | 2012-11-29 Electrical characteristics of MIS-diodes with A_2lO_3 deposited by ALD on GaN Yasuhiro IWATA, Toshiharu KUBO, Takashi EGAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We focused Al_2O_3 as an insulator in MIS structures. MIS-diodes were fabricated with Al_2O_3 deposited by ALD on GaN at 200℃,250℃ and 300℃, and their electrical characteristics were evaluated. H_2O or O_3 or both of them were used as an oxygen precursor. The leakage current was suppressed by Al_2O_3 deposition, and the smallest threshold voltage shift was observed with the Al_2O_3 deposited by O_3 at 300℃/when using H_2O or O_3. Further the oxide charge in Al_2O_3 deposited by both H_2O and O_3 alternately was smaller than in Al_2O_3 deposited by H_2O or O_3. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / MIS-diodes / ALD / insulator / interface |
Paper # | ED2012-73,CPM2012-130,LQE2012-101 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2012/11/22(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electrical characteristics of MIS-diodes with A_2lO_3 deposited by ALD on GaN |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | MIS-diodes |
Keyword(3) | ALD |
Keyword(4) | insulator |
Keyword(5) | interface |
1st Author's Name | Yasuhiro IWATA |
1st Author's Affiliation | Research Center for Nano-Device System, Nagoya Institute of Technology() |
2nd Author's Name | Toshiharu KUBO |
2nd Author's Affiliation | Research Center for Nano-Device System, Nagoya Institute of Technology |
3rd Author's Name | Takashi EGAWA |
3rd Author's Affiliation | Research Center for Nano-Device System, Nagoya Institute of Technology |
Date | 2012-11-29 |
Paper # | ED2012-73,CPM2012-130,LQE2012-101 |
Volume (vol) | vol.112 |
Number (no) | 329 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |