| Presentation | 2012-11-29 High growth rate AlN and AlGaN on large diameter Si substrate(6inch & 8inch) Hiroki Tokunaga, Akinori Ubukata, Yoshiki Yano, Yuya Yamaoka, Akira Yamaguchi, Toshiya Tabuchi, Kou Matumoto, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed large scale MOCVD system with capacity of 6×8inch wafers. We have tried AlN and AlGaN growth on 8 inch Si(111) substrate using this system. As a result of AlN growth, we have not observed a growth rate saturation up to a growth rate as high as 2μm/hr for 8inch Si and 4μm/hr for 6inch Si. We obtained crack-free epitaxial film with good thickness uniformity of±1.8%‥ And as for AlGaN growth, we have confirmed that whole range of Al composition can be controlled at a growth rate of over 1μm/hr. These results indicate that gas phase pre-reaction between NH3 and MO precursor is controlled very well. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 8 inch / MOCVD / AlN / AlGaN / Gas phase pre-reaction |
| Paper # | ED2012-69,CPM2012-126,LQE2012-97 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High growth rate AlN and AlGaN on large diameter Si substrate(6inch & 8inch) |
| Sub Title (in English) | |
| Keyword(1) | 8 inch |
| Keyword(2) | MOCVD |
| Keyword(3) | AlN |
| Keyword(4) | AlGaN |
| Keyword(5) | Gas phase pre-reaction |
| 1st Author's Name | Hiroki Tokunaga |
| 1st Author's Affiliation | Taiyo Nippon sanso corporation Electronics group() |
| 2nd Author's Name | Akinori Ubukata |
| 2nd Author's Affiliation | Taiyo Nippon sanso corporation Electronics group |
| 3rd Author's Name | Yoshiki Yano |
| 3rd Author's Affiliation | Taiyo Nippon sanso corporation Electronics group |
| 4th Author's Name | Yuya Yamaoka |
| 4th Author's Affiliation | Taiyo Nippon sanso corporation Electronics group |
| 5th Author's Name | Akira Yamaguchi |
| 5th Author's Affiliation | Taiyo Nippon sanso corporation Electronics group |
| 6th Author's Name | Toshiya Tabuchi |
| 6th Author's Affiliation | Taiyo Nippon sanso corporation Electronics group |
| 7th Author's Name | Kou Matumoto |
| 7th Author's Affiliation | TN EMC LTD. |
| Date | 2012-11-29 |
| Paper # | ED2012-69,CPM2012-126,LQE2012-97 |
| Volume (vol) | vol.112 |
| Number (no) | 329 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |