Presentation | 2012-11-29 Layered boron nitride as a release layer for mechanical transfer of GaN-based devices Yasuyuki KOBAYASHI, Kazuhide KUMAKURA, Tetsuya AKASAKA, Hideki YAMAMOTO, Toshiki MAKIMOTO, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Nitride Semiconductors / Hexagonal Boron Nitride / Mechanical Transfer |
Paper # | ED2012-66,CPM2012-123,LQE2012-94 |
Date of Issue |
Conference Information | |
Committee | LQE |
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Conference Date | 2012/11/22(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
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Assistant |
Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Layered boron nitride as a release layer for mechanical transfer of GaN-based devices |
Sub Title (in English) | |
Keyword(1) | Nitride Semiconductors |
Keyword(2) | Hexagonal Boron Nitride |
Keyword(3) | Mechanical Transfer |
1st Author's Name | Yasuyuki KOBAYASHI |
1st Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation() |
2nd Author's Name | Kazuhide KUMAKURA |
2nd Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
3rd Author's Name | Tetsuya AKASAKA |
3rd Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
4th Author's Name | Hideki YAMAMOTO |
4th Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
5th Author's Name | Toshiki MAKIMOTO |
5th Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
Date | 2012-11-29 |
Paper # | ED2012-66,CPM2012-123,LQE2012-94 |
Volume (vol) | vol.112 |
Number (no) | 329 |
Page | pp.pp.- |
#Pages | 1 |
Date of Issue |