Presentation 2012-11-30
Study on inductively-coupled-plasma-dry-etching-mask for AlGaAs photonic crystal fabrication
Yuji TOGANO, Yuta KITABAYASHI, Fumitaro ISHIKAWA, Masahiko KONDOW,
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Abstract(in English) We investigate inductively coupled plasma etching mask of Al-rich AlGaAs for photonic crystal (PC) fabrication. This study examined advantage of Si_3N_4 mask in comparison with SiO_2 mask used conventionally. It was found that the oxygen which comes from SiO_2 mask hardly affects the Al oxide deposits. It was also found that Si_3N_4 mask is higher in tolerance than SiO_2 mask. Si_3N_4 mask is promising under wider condition on etching.
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Keyword(in English) Inductively coupled plasma etching / Al-rich AlGaAs / Photonic crystal
Paper # ED2012-90,CPM2012-147,LQE2012-118
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Committee ED
Conference Date 2012/11/22(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study on inductively-coupled-plasma-dry-etching-mask for AlGaAs photonic crystal fabrication
Sub Title (in English)
Keyword(1) Inductively coupled plasma etching
Keyword(2) Al-rich AlGaAs
Keyword(3) Photonic crystal
1st Author's Name Yuji TOGANO
1st Author's Affiliation Department of Quantum Electronic Device Engineering, Graduate School of Engineering, Osaka University()
2nd Author's Name Yuta KITABAYASHI
2nd Author's Affiliation Department of Quantum Electronic Device Engineering, Graduate School of Engineering, Osaka University
3rd Author's Name Fumitaro ISHIKAWA
3rd Author's Affiliation Department of Quantum Electronic Device Engineering, Graduate School of Engineering, Osaka University
4th Author's Name Masahiko KONDOW
4th Author's Affiliation Department of Quantum Electronic Device Engineering, Graduate School of Engineering, Osaka University
Date 2012-11-30
Paper # ED2012-90,CPM2012-147,LQE2012-118
Volume (vol) vol.112
Number (no) 327
Page pp.pp.-
#Pages 4
Date of Issue