Presentation 2012-11-30
Growth of InAs-QDs emitting at 1μm with a broadband spectrum via In-flush method for bio/medical imaging
Y. Hino, N. Ozaki, S. Ohkouchi, N. Ikeda, Y. Sugimoto,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have grown self-assembled InAs quantum dots (QDs) on a GaAs substrate emitting at around 1.05μm in wavelength using the In-flush technique. This technique enables the realization of a broadband 1.05-μm light source with a bandwidth of beyond 200nm via a combination of fabricated In-flushed QDs. Such a broadband light source is applicable to optical coherence tomography (OCT), thereby enabling high-resolution and large penetration depth in the OCT images. In addition, we found that a higher emission intensity of the In-flushed QDs can be obtained by reducing the annealing temperature of the In-flush process.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InAs quantum dot / In-flush / OCT
Paper # ED2012-89,CPM2012-146,LQE2012-117
Date of Issue

Conference Information
Committee ED
Conference Date 2012/11/22(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of InAs-QDs emitting at 1μm with a broadband spectrum via In-flush method for bio/medical imaging
Sub Title (in English)
Keyword(1) InAs quantum dot
Keyword(2) In-flush
Keyword(3) OCT
1st Author's Name Y. Hino
1st Author's Affiliation Wakayama Univ.()
2nd Author's Name N. Ozaki
2nd Author's Affiliation Wakayama Univ.
3rd Author's Name S. Ohkouchi
3rd Author's Affiliation NEC Corp.
4th Author's Name N. Ikeda
4th Author's Affiliation NIMS
5th Author's Name Y. Sugimoto
5th Author's Affiliation NIMS
Date 2012-11-30
Paper # ED2012-89,CPM2012-146,LQE2012-117
Volume (vol) vol.112
Number (no) 327
Page pp.pp.-
#Pages 4
Date of Issue