Presentation 2012-11-30
Fabrication of radial InP/InAsP quantum wells on InP nanowires for near-infrared optical devices
Kenichi KAWAGUCHI, Yoshiaki NAKATA, Mitsuru EKAWA, Tsuyoshi YAMAMOTO, Yasuhiko ARAKAWA,
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Abstract(in English) InP-based nanowire (NW) heterostructures have attracted attentions as a building block for fabricating nano-scale light emitting devices in the near-infrared region. We investigated the growth of/radial InP/InAsP quantum wells (QWs) on wurtzite (WZ) InP NWs using metalorganic vapor phase epitaxy and their optical properties. Radial InAsP QW layers were epitaxially grown on WZ-InP NW cores, which resulted in WZ-NW shells with smooth surface and high crystalline quality. Photoluminescence wavelengths were successfully controlled by adjusting the radial QW thickness and arsenic composition of InAsP, and emissions in the 1.3-μm region were demonstrated at room temperature.
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Keyword(in English) InP nanowire / wurtzite crystal / radial InP/InAsP quantum well
Paper # ED2012-88,CPM2012-145,LQE2012-116
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Committee ED
Conference Date 2012/11/22(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Fabrication of radial InP/InAsP quantum wells on InP nanowires for near-infrared optical devices
Sub Title (in English)
Keyword(1) InP nanowire
Keyword(2) wurtzite crystal
Keyword(3) radial InP/InAsP quantum well
1st Author's Name Kenichi KAWAGUCHI
1st Author's Affiliation Fujitsu Laboratories Limited()
2nd Author's Name Yoshiaki NAKATA
2nd Author's Affiliation Fujitsu Laboratories Limited
3rd Author's Name Mitsuru EKAWA
3rd Author's Affiliation Fujitsu Laboratories Limited
4th Author's Name Tsuyoshi YAMAMOTO
4th Author's Affiliation Fujitsu Laboratories Limited
5th Author's Name Yasuhiko ARAKAWA
5th Author's Affiliation INQIE, The University of Tokyo
Date 2012-11-30
Paper # ED2012-88,CPM2012-145,LQE2012-116
Volume (vol) vol.112
Number (no) 327
Page pp.pp.-
#Pages 4
Date of Issue