| Presentation | 2012-11-30 Analysis of band structure and Auger recombination process in wurtzite InGaN Gen-ichi Hatakoshi, Shinya Nunoue, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A characteristic feature of the wurtzite semiconductor is the existence of a higher conduction band having the energy difference comparable to the bandgap energy. In such band structure, the Auger coefficient can be significantly large and affect the efficiency droop of the LED. Based on the analysis of band structure, the Auger coefficients in wurtzite InGaN have been calculated. The results indicate that the Auger coefficient for the wurtzite InGaN near the 450nm wavelength region is sufficiently large to cause the efficiency droop. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Wurtzite / Band structure / Auger recombination / InGaN / LED / Efficiency droop |
| Paper # | ED2012-86,CPM2012-143,LQE2012-114 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of band structure and Auger recombination process in wurtzite InGaN |
| Sub Title (in English) | |
| Keyword(1) | Wurtzite |
| Keyword(2) | Band structure |
| Keyword(3) | Auger recombination |
| Keyword(4) | InGaN |
| Keyword(5) | LED |
| Keyword(6) | Efficiency droop |
| 1st Author's Name | Gen-ichi Hatakoshi |
| 1st Author's Affiliation | Toshiba R&D Center() |
| 2nd Author's Name | Shinya Nunoue |
| 2nd Author's Affiliation | Toshiba R&D Center |
| Date | 2012-11-30 |
| Paper # | ED2012-86,CPM2012-143,LQE2012-114 |
| Volume (vol) | vol.112 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |