| Presentation | 2012-11-30 Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source Shunsuke OCHIAI, Mayuna TAKAGI, Fumitsugu Fukuyo, Hideto MIYAKE, Kazumasa HIRAMATSU, Yuji KOBAYASHI, Harumasa YOSHIDA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Al_xGa_<1-x>N alloy has attracted significant attention owing to its emission covering the wavelength range from 210 to 365nm upon changing the AlN molar fraction x. Research on the application of this characteristic to deep-ultraviolet (UV) light-emitting diodes (LEDs) is being actively carried out. However, the emission efficiency of LEDs with wavelengths of less than 280nm is rather low, partly due to the high resistivity of p-type AlGaN and the low quality of the AlGaN template. In this work, we performed the growth of Si-doped AlGaN multiple quantum wells (MQWs) on AlN/sapphire templates by low-pressure MOVPE (LP-MOVPE), and also studied optical properties as deep-UV-light-source by electron beam excitation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | LP-MOVPE / Si-doped AlGaN / Multiple Quantum Wells / UV-light-source |
| Paper # | ED2012-85,CPM2012-142,LQE2012-113 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source |
| Sub Title (in English) | |
| Keyword(1) | LP-MOVPE |
| Keyword(2) | Si-doped AlGaN |
| Keyword(3) | Multiple Quantum Wells |
| Keyword(4) | UV-light-source |
| 1st Author's Name | Shunsuke OCHIAI |
| 1st Author's Affiliation | Faculty of Engineering, Mie University() |
| 2nd Author's Name | Mayuna TAKAGI |
| 2nd Author's Affiliation | Faculty of Engineering, Mie University |
| 3rd Author's Name | Fumitsugu Fukuyo |
| 3rd Author's Affiliation | Faculty of Engineering, Mie University:HAMAMATSU PHOTONICS K. K. |
| 4th Author's Name | Hideto MIYAKE |
| 4th Author's Affiliation | Faculty of Engineering, Mie University |
| 5th Author's Name | Kazumasa HIRAMATSU |
| 5th Author's Affiliation | Faculty of Engineering, Mie University |
| 6th Author's Name | Yuji KOBAYASHI |
| 6th Author's Affiliation | HAMAMATSU PHOTONICS K. K. |
| 7th Author's Name | Harumasa YOSHIDA |
| 7th Author's Affiliation | HAMAMATSU PHOTONICS K. K. |
| Date | 2012-11-30 |
| Paper # | ED2012-85,CPM2012-142,LQE2012-113 |
| Volume (vol) | vol.112 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |