Presentation | 2012-11-30 Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates Yoon Seok KIM, Akio KANETA, Mitsuru FUNATO, Yoichi KAWAKAMI, Takashi MIYOSHI, Shin-ichi NAGAHAMA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The optical properties of InGaN-based green (512nm) laser structures fabricated on (0001) GaN substrates are investigated by means of photoluminescence and gain spectroscopies. It is demonstrated that in the state-of-the-art (0001) green InGaN quantum wells, potential fluctuations are drastically suppressed, and the internal loss is as low as ~10/cm, both of which lead to a low threshold current density of 2.75kA/cm^2. The suppressed inhomogeneity also contributes to high linearity of gain increase with the injection current. The differential gain is relatively low, and is attributed to a low confinement factor in the longer wavelength spectral range. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Green laser diodes / (0001) planes / Optical properties / Gain / Potential fluctuations / Piezoelectric polarization |
Paper # | ED2012-81,CPM2012-138,LQE2012-109 |
Date of Issue |
Conference Information | |
Committee | ED |
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Conference Date | 2012/11/22(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates |
Sub Title (in English) | |
Keyword(1) | Green laser diodes |
Keyword(2) | (0001) planes |
Keyword(3) | Optical properties |
Keyword(4) | Gain |
Keyword(5) | Potential fluctuations |
Keyword(6) | Piezoelectric polarization |
1st Author's Name | Yoon Seok KIM |
1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
2nd Author's Name | Akio KANETA |
2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
3rd Author's Name | Mitsuru FUNATO |
3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
4th Author's Name | Yoichi KAWAKAMI |
4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
5th Author's Name | Takashi MIYOSHI |
5th Author's Affiliation | Nitride Semiconductor Research Laboratory, Nichia Corporation |
6th Author's Name | Shin-ichi NAGAHAMA |
6th Author's Affiliation | Nitride Semiconductor Research Laboratory, Nichia Corporation |
Date | 2012-11-30 |
Paper # | ED2012-81,CPM2012-138,LQE2012-109 |
Volume (vol) | vol.112 |
Number (no) | 327 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |