Presentation 2012-11-30
Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
Yoon Seok KIM, Akio KANETA, Mitsuru FUNATO, Yoichi KAWAKAMI, Takashi MIYOSHI, Shin-ichi NAGAHAMA,
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Abstract(in English) The optical properties of InGaN-based green (512nm) laser structures fabricated on (0001) GaN substrates are investigated by means of photoluminescence and gain spectroscopies. It is demonstrated that in the state-of-the-art (0001) green InGaN quantum wells, potential fluctuations are drastically suppressed, and the internal loss is as low as ~10/cm, both of which lead to a low threshold current density of 2.75kA/cm^2. The suppressed inhomogeneity also contributes to high linearity of gain increase with the injection current. The differential gain is relatively low, and is attributed to a low confinement factor in the longer wavelength spectral range.
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Keyword(in English) Green laser diodes / (0001) planes / Optical properties / Gain / Potential fluctuations / Piezoelectric polarization
Paper # ED2012-81,CPM2012-138,LQE2012-109
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Committee ED
Conference Date 2012/11/22(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
Sub Title (in English)
Keyword(1) Green laser diodes
Keyword(2) (0001) planes
Keyword(3) Optical properties
Keyword(4) Gain
Keyword(5) Potential fluctuations
Keyword(6) Piezoelectric polarization
1st Author's Name Yoon Seok KIM
1st Author's Affiliation Department of Electronic Science and Engineering, Kyoto University()
2nd Author's Name Akio KANETA
2nd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
3rd Author's Name Mitsuru FUNATO
3rd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
4th Author's Name Yoichi KAWAKAMI
4th Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
5th Author's Name Takashi MIYOSHI
5th Author's Affiliation Nitride Semiconductor Research Laboratory, Nichia Corporation
6th Author's Name Shin-ichi NAGAHAMA
6th Author's Affiliation Nitride Semiconductor Research Laboratory, Nichia Corporation
Date 2012-11-30
Paper # ED2012-81,CPM2012-138,LQE2012-109
Volume (vol) vol.112
Number (no) 327
Page pp.pp.-
#Pages 4
Date of Issue