| Presentation | 2012-11-30 Fabrication of red light emitting diode with GaN:Eu,Mg active layer Tatsuki Otani, Hiroto Sekiguchi, Yasufumi Takagi, Hiroshi Okada, Akihiro Wakahara, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Rare-earth doped semiconductor is a promising candidate for next generation light-emitting devices due to superior optical characteristics, such as narrow spectrum and small temperature quenching. In this study, red light-emitting diodes (LEDs) with Mg codoped GaN:Eu (GaN:Eu,Mg) active layer were fabricated by NH_3-MBE. The rectification characteristics with turn-on voltage of approximately 3.3V was observed. Sharp red emission corresponding to ^5D_0-^7D_2 transition was observed around 620nm. Mg codoping brought about not only the improvement of emission intensity but the increase of serial resistance of active layer. For further development of GaN:Eu LEDs, Eu concentration dependence of optical properties was investigated. The emission from Eu ions was not observed for/GaN:Eu with Eu concentration of less than 8×10^<19>cm^<-3>, but the strong emission from site A was observed for GaN:Eu,Mg with low Eu concentration. This was caused by that Eu ions incorporated in inactive optical sites were incorporated in site A by Mg codoping. For Mg codoped samples, PL integrated intensity was almost constant regardless of Eu concentration. Therefore, the use of GaN:Eu,Mg with low Eu concentration leads to improve the LED characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Rare-earth doped semiconductor / Eu / GaN / Mg co-doping / molecular-beam epitaxy |
| Paper # | ED2012-80,CPM2012-137,LQE2012-108 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of red light emitting diode with GaN:Eu,Mg active layer |
| Sub Title (in English) | |
| Keyword(1) | Rare-earth doped semiconductor |
| Keyword(2) | Eu |
| Keyword(3) | GaN |
| Keyword(4) | Mg co-doping |
| Keyword(5) | molecular-beam epitaxy |
| 1st Author's Name | Tatsuki Otani |
| 1st Author's Affiliation | Graduate School of Engineering, Toyohashi University of Technology() |
| 2nd Author's Name | Hiroto Sekiguchi |
| 2nd Author's Affiliation | Graduate School of Engineering, Toyohashi University of Technology |
| 3rd Author's Name | Yasufumi Takagi |
| 3rd Author's Affiliation | Hamamatsu Photonics K. K. |
| 4th Author's Name | Hiroshi Okada |
| 4th Author's Affiliation | Graduate School of Engineering, Toyohashi University of Technology:Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology |
| 5th Author's Name | Akihiro Wakahara |
| 5th Author's Affiliation | Graduate School of Engineering, Toyohashi University of Technology |
| Date | 2012-11-30 |
| Paper # | ED2012-80,CPM2012-137,LQE2012-108 |
| Volume (vol) | vol.112 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |